K6R1008C1D SAMSUNG [Samsung semiconductor], K6R1008C1D Datasheet - Page 8

• Manufacturer Part Number: K6R1008C1D
• Description: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1016V1D
TIMING WAVEFORM OF WRITE CYCLE(3)
TIMING WAVEFORM OF WRITE CYCLE(2)
Address
CS
UB, LB
WE
Data in
Data out
Address
CS
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
AS(4)
High-Z
t
AS(4)
t
(CS=Controlled)
(OE =Low fixed)
LZ
- 8 -
t
WHZ(6)
t
t
WHZ(6)
AW
t
AW
t
CW(3)
t
WC
t
t
CW(3)
BW
t
BW
t
WC
t
WP(2)
t
WP1(2)
t
High-Z
Valid Data
DW
t
DW
Valid Data
t
WR(5)
t
DH
t
t
WR(5)
DH
t
OW
CMOS SRAM
High-Z(8)
for AT&T
(10)
Revision 3.0
High-Z
June 2002
(9)