K7R643682M SAMSUNG [Samsung semiconductor], K7R643682M Datasheet

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K7R643682M

Manufacturer Part Number
K7R643682M
Description
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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0
Document Title
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
K7R643682M
K7R641882M
K7R640982M
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDR
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
History
1. Initial document.
1. Update AC timing characteristics.
2. Change the JTAG instruction coding.
1. Change the AC timing characteristics. (-25/-20 parts)
2. Correct the overshoot and undershoot timing diagrams.
3. Change the JTAG Block diagrams.
4. Update the Boundary scan exit order.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Add the Power-on Sequence specification
1. Correct the pin name table
2Mx36 & 4Mx18 & 8Mx9 QDR
TM
II b2 SRAM
- 1 -
Sep, 14 2002
Oct. 24, 2002
Feb. 18, 2003
Mar. 20, 2003
Aug. 16, 2004
Oct. 18, 2004
Draft Date
TM
Preliminary
II b2 SRAM
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Remark
Oct. 2004
Rev 0.5

Related parts for K7R643682M

K7R643682M Summary of contents

Page 1

... K7R643682M K7R641882M K7R640982M Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDR Revision History Rev. No. History 0.0 1. Initial document. 0.1 1. Update AC timing characteristics. 2. Change the JTAG instruction coding. 0.2 1. Change the AC timing characteristics. (-25/-20 parts) 2. Correct the overshoot and undershoot timing diagrams. 3. Change the JTAG Block diagrams. 4. Update the Boundary scan exit order. ...

Page 2

... X36 X18 X9 36 (or 18 ,9) 36 (or 18, 9) WRITE DRIVER 20 1Mx36 (2Mx18) MEMORY ARRAY SELECT OUTPUT CONTROL - 2 - Preliminary SRAM Part Cycle Access Number Time Time K7R643682M-FC25 4.0 0.45 K7R643682M-FC20 5.0 0.45 K7R643682M-FC16 6.0 0.50 K7R641882M-FC25 4.0 0.45 K7R641882M-FC20 5.0 0.45 K7R641882M-FC16 6.0 0.50 K7R640982M-FC25 4.0 0.45 K7R640982M-FC20 5.0 0.45 K7R640982M-FC16 6.0 0. (or 36, (or 36, 18) 18) 36 (or 18, 9) Q(Data Out) ...

Page 3

... DD V 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L DDQ 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M TMS TDI TCK TDO NC Notes cannot be set to V REF 2. When ZQ pin is directly connected Not connected to chip pad internally. 2Mx36 & 4Mx18 & 8Mx9 QDR K7R643682M(2Mx36 ...

Page 4

... K7R643682M K7R641882M K7R640982M PIN CONFIGURATIONS (TOP VIEW) K7R641882M(4Mx18 /SA D10 D NC D11 Q10 Q11 F NC Q12 D12 G NC D13 Q13 H Doff V V REF DDQ D14 Q14 L NC Q15 D15 D16 ...

Page 5

... K7R643682M K7R641882M K7R640982M PIN CONFIGURATIONS (TOP VIEW) K7R640982M(8Mx9 Doff V V REF DDQ TDO ...

Page 6

... And pipelined data are transferred out of device on every rising edge of both C and C clocks. In case C and C tied to high, output data are triggered by K and K insted of C and C. When the R is disabled after a read operation, the K7R643682M,K7R641882M and K7R640982M will first complete burst read operation before entering into deselect mode at the next K clock rising edge. ...

Page 7

... K7R641882M K7R640982M Single Clock Mode K7R643682M,K7R641882M and K7R640982M can be operated with the single clock pair K and K, insted for output clocks. To operate these devices in single clock mode, C and C must be tied high during power up and must be maintained high during operation. After power up, this device can’t change to or from single clock mode. ...

Page 8

... K7R643682M K7R641882M K7R640982M Detail Specification of Power-Up Sequence in QDRII SRAM QDRII SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. • Power-Up Sequence 1. Apply power and keep Doff at low state (All other inputs may be undefined) - Apply VDD before VDDQ - Apply VDDQ before VREF or the same time with VREF 2 ...

Page 9

... K7R643682M K7R641882M K7R640982M TRUTH TABLES SYNCHRONOUS TRUTH TABLE Stopped X X Previous state Din at K(t) X Notes means "Don t Care". 2. The rising edge of clock is symbolized Before enter into clock stop status, all pending read and write operations will be completed. ...

Page 10

... K7R643682M K7R641882M K7R640982M ABSOLUTE MAXIMUM RATINGS* PARAMETER Voltage on V Supply Relative Voltage on V Supply Relative to V DDQ Voltage on Input Pin Relative Storage Temperature Operating Temperature Storage Temperature Range Under Bias *Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied ...

Page 11

... K7R643682M K7R641882M K7R640982M AC ELECTRICAL CHARACTERISTICS PARAMETER Input High Voltage Input Low Voltage Notes: 1. This condition is for AC function test only, not for AC parameter test maintain a valid level, the transitioning edge of the input must : a) Sustain a constant slew rate from the current AC level through the target AC level, V ...

Page 12

... K7R643682M K7R641882M K7R640982M THERMAL RESISTANCE PRMETER Junction to Ambient Junction to Case Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site thermal impedance PIN CAPACITANCE PRMETER Address Control Input Capacitance Input and Output Capacitance Clock Capacitance Note: 1 ...

Page 13

... K7R643682M K7R641882M K7R640982M APPLICATION INRORMATION Vt R Data In Data Out Address MEMORY CONTROLLER Return CLK Vt Source CLK Return CLK Vt Source CLK R=50 Vt=V SRAM1 Input CQ SRAM1 Input CQ SRAM4 Input CQ SRAM4 Input CQ 2Mx36 & 4Mx18 & 8Mx9 QDR ZQ R=250 SRAM ...

Page 14

... K7R643682M K7R641882M K7R640982M TIMING WAVE FORMS OF READ AND NOP READ t KHKH t KLKH K t KHKL IVKH KHIX R Q(Data Out) t KHKH C t KHKL Note: 1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0. 2. Outputs are disabled one cycle after a NOP. ...

Page 15

... K7R643682M K7R641882M K7R640982M TIMING WAVE FORMS OF READ, WRITE AND NOP READ WRITE D2-1 D2-2 D(Data In) Q(Data Out Note address A2=A3, data Q3-1=D2-1, data Q3-2=D2-2. Write data is forwarded immediately as read results. 2.BWx assumed active. 2Mx36 & 4Mx18 & 8Mx9 QDR READ ...

Page 16

... K7R643682M K7R641882M K7R640982M IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG This part contains an IEEE standard 1149.1 Compatible Test Access Port(TAP). The package pads are monitored by the Serial Scan circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics. Internal data is not driven out of the SRAM under JTAG control ...

Page 17

... K7R643682M K7R641882M K7R640982M SCAN REGISTER DEFINITION Part Instruction Register 2Mx36 3 bits 4Mx18 3 bits 8Mx9 3 bits ID REGISTER DEFINITION Revision Number Part (31:29) 2Mx36 000 4Mx18 000 8Mx9 000 Note : Part Configuration /def=011 for 72Mb, /wx=11 for x36, 10 for x18, 00 for x9. /t=1 for DLL Ver., 0 for non-DLL Ver. /q=1 for QDR, 0 for DDR /b=1 for 4Bit Burst, 0 for 2Bit Burst /s=1 for Separate I/O, 0 for Common I/O ...

Page 18

... K7R643682M K7R641882M K7R640982M JTAG DC OPERATING CONDITIONS Parameter Power Supply Voltage Input High Level Input Low Level Output High Voltage(I =-2mA) OH Output Low Voltage(I =2mA) OL Note: 1. The input level of SRAM pin is to follow the SRAM DC specification JTAG AC TEST CONDITIONS Parameter Input High/Low Level ...

Page 19

... K7R643682M K7R641882M K7R640982M 165 FBGA PACKAGE DIMENSIONS 15mm x 17mm Body, 1.0mm Bump Pitch, 11x15 Ball Array Symbol Value Units 0.1 C 1.3 0.1 D 0.35 0.05 2Mx36 & 4Mx18 & 8Mx9 QDR Note Symbol Preliminary SRAM Top View ...

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