K7N161801M SAMSUNG [Samsung semiconductor], K7N161801M Datasheet - Page 10

• Manufacturer Part Number: K7N161801M
• Description: 512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7N163601M
K7N161801M
ASYNCHRONOUS TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS*
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
OPERATING CONDITIONS at 3.3V I/O
OPERATING CONDITIONS at 2.5V I/O
CAPACITANCE*
*Notes : Sampled not 100% tested.
Voltage on V
Voltage on Any Other Pin Relative to V
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Supply Voltage
Ground
Supply Voltage
Ground
Input Capacitance
Output Capacitance
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATION
Sleep Mode
Deselected
PARAMETER
PARAMETER
Parameter
Read
Write
DD
Supply Relative to V
(T
PARAMETER
A
=25 C, f=1MHz)
ZZ
H
L
L
L
L
SS
SYMBOL
SYMBOL
SS
Symbol
V
V
C
V
V
OE
V
V
C
DDQ
DDQ
X
H
X
X
OUT
L
DD
SS
DD
SS
IN
I/O STATUS
Din, High-Z
High-Z
High-Z
High-Z
DQ
(0 C
(0 C
Test Condition
V
V
OUT
3.135
3.135
3.135
2.375
IN
MIN
MIN
512Kx36 & 1Mx18 Pipelined NtRAM
T
T
0
0
=0V
A
A
=0V
- 10 -
70 C)
70 C)
Notes
1. X means "Don t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
3. Deselected means power Sleep Mode of which stand-by current
SYMBOL
not depend on cycle time.
depends on cycle time.
T
T
T
V
V
P
BIAS
STG
OPR
DD
IN
D
Typ.
Typ.
Min
3.3
3.3
3.3
2.5
0
0
-
-
-0.3 to 4.6
-0.3 to 4.6
-65 to 150
-10 to 85
RATING
0 to 70
1.6
3.465
3.465
3.465
MAX
MAX
Max
2.9
0
0
7
9
December 1999
UNIT
UNIT
Unit
UNIT
pF
pF
V
V
V
V
V
V
W
V
V
C
C
C
Rev 1.0
TM