K7N163631B-QFCI25 SAMSUNG [Samsung semiconductor], K7N163631B-QFCI25 Datasheet - Page 11

• Manufacturer Part Number: K7N163631B-QFCI25
• Description: 512Kx36 & 1Mx18 Pipelined NtRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7N163631B
K7N161831B
ASYNCHRONOUS TRUTH TABLE
CAPACITANCE*
*Note : Sampled not 100% tested.
OPERATING CONDITIONS
Notes: 1. The above parameters are also guaranteed at industrial temperature range.
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
Voltage on V
Voltage on Any Other Pin Relative to V
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Input Capacitance
Output Capacitance
Supply Voltage
Ground
2. It should be V
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATION
Sleep Mode
Deselected
PARAMETER
PARAMETER
Read
Write
DD
Supply Relative to V
DDQ
(T
A
V
=25 C, f=1MHz)
V
SS-
PARAMETER
DD
V
1.0V
SS
ZZ
H
L
L
L
L
V
SS
IH
SYMBOL
(0 C
SYMBOL
SS
V
V
C
V
V
OE
V
C
DDQ1
DDQ2
X
H
X
X
OUT
L
DD1
DD2
SS
IN
T
A
I/O STATUS
Din, High-Z
High-Z
High-Z
High-Z
70 C)
DQ
Commercial
Industrial
TEST CONDITION
20% t
2.375
2.375
3.135
3.135
MIN
512Kx36 & 1Mx18 Pipelined NtRAM
0
V
- 11 -
V
CYC
OUT
IN
=0V
(MIN)
=0V
Notes
1. X means "Don t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
3. Deselected means power Sleep Mode of which stand-by current
not depend on cycle time.
depends on cycle time.
SYMBOL
T
T
T
T
V
V
P
BIAS
OPR
OPR
STG
DD
IN
D
Typ.
2.5
2.5
3.3
3.3
0
MIN
-
-
-0.3 to V
-0.3 to 4.6
-65 to 150
-40 to 85
-10 to 85
RATING
0 to 70
2.625
2.625
3.465
3.465
MAX
1.6
0
DD
MAX
TBD
TBD
+0.3
Preliminary
UNIT
UNIT
UNIT
Jan. 2005
V
V
V
V
V
W
V
V
pF
pF
C
C
C
C
Rev 0.4
TM