K7N163631B-QFCI25 SAMSUNG [Samsung semiconductor], K7N163631B-QFCI25 Datasheet - Page 17

• Manufacturer Part Number: K7N163631B-QFCI25
• Description: 512Kx36 & 1Mx18 Pipelined NtRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7N163631B
K7N161831B
JTAG DC OPERATING CONDITIONS
NOTE : The input level of SRAM pin is to follow the SRAM DC specification
JTAG AC TEST CONDITIONS
JTAG AC Characteristics
JTAG TIMING DIAGRAM
Power Supply Voltage
Input High Level
Input Low Level
Output High Voltage
Output Low Voltage
Input High/Low Level
Input Rise/Fall Time
Input and Output Timing Reference Level
TCK Cycle Time
TCK High Pulse Width
TCK Low Pulse Width
TMS Input Setup Time
TMS Input Hold Time
TDI Input Setup Time
TDI Input Hold Time
SRAM Input Setup Time
SRAM Input Hold Time
Clock Low to Output Valid
(SRAM)
TMS
PI
TDO
TCK
TDI
Parameter
Parameter
Parameter
Symbol
V
V
V
V
V
DD
OH
OL
IH
IL
t
CHCH
t
CLQV
3.135/2.375
2.0/1.7
2.4/2.0
Min
-0.3
Symbol
V
-
TR/TF
IH
/V
t
t
t
Symbol
DVCH
MVCH
SVCH
IL
t
t
t
t
t
t
t
t
t
t
CHCH
MVCH
CHMX
DVCH
CHDX
CHCL
CLCH
SVCH
CHSX
CLQV
512Kx36 & 1Mx18 Pipelined NtRAM
- 17 -
.
t
t
t
CHMX
3.3/2.5
CHDX
CHSX
Typ
-
-
-
-
1.0/1.0 , 1.0/1.0
Min
50
20
20
5
5
5
5
5
5
0
t
3.0/0 , 2.5/0
CHCL
V
DDQ
Min
/2
3.465/2.625
V
0.8/0.7
0.4/0.4
Max
DD
10
Max
-
-
-
-
-
-
-
-
-
+0.3
-
t
CLCH
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
Unit
Preliminary
ns
V
V
V
V
V
V
V
Jan. 2005
Note
Note
Note
Rev 0.4
TM