K6T4016V3C-TF85 SAMSUNG [Samsung semiconductor], K6T4016V3C-TF85 Datasheet - Page 5

• Manufacturer Part Number: K6T4016V3C-TF85
• Description: 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

DATA RETENTION CHARACTERISTICS
1. Industrial product = 20
AC OPERATING CONDITIONS
TEST CONDITIONS
AC CHARACTERISTICS
K6T4016V3C, K6T4016U3C Family
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): C
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
Read cycle time
Address access time
Chip select to output
Output enable to valid output
LB, UB valid to data output
Chip select to low-Z output
Output enable to low-Z output
LB, UB enable to low-Z output
Output hold from address change
Chip disable to high-Z output
OE disable to high-Z output
LB, UB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
Item
Parameter List
A
( Test Load and Input/Output Reference)
C
L
L
=30pF+1TTL
=100pF+1TTL
Commercial product: T
(K6T4016V3C Family: Vcc=3.0~3.6V, K6T4016U3C Family: Vcc=2.7~3.3V
Symbol
t
t
V
I
RDR
SDR
DR
DR
Symbol
CS Vcc-0.2V
Vcc=3.0V, CS Vcc-0.2V
See data retention waveform
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OHZ
t
WHZ
t
t
OLZ
BHZ
BLZ
WC
CW
WR
DW
OW
CO
OH
AW
WP
BW
RC
AA
OE
BA
HZ
AS
DH
LZ
A
=0 to 70 C, Industrial product: T
Test Condition
Min
55
10
10
55
45
45
40
25
45
5
5
0
0
0
0
0
0
0
5
-
-
-
-
55ns
Max
5
55
55
25
25
20
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
70
10
10
70
60
60
55
30
60
5
5
0
0
0
0
0
0
0
5
1.Including scope and jig capacitance
-
-
-
-
70ns
C
Max
Speed Bins
70
70
35
35
25
25
25
25
L
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
)
A
=-40 to 85 C)
Min
2.0
Min
85
10
10
85
70
70
60
35
70
0
5
-
5
5
0
0
0
0
0
0
0
5
-
-
-
-
85ns
Max
85
85
40
40
25
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.5
-
-
-
CMOS SRAM
Min
100
100
10
15
80
80
70
40
80
5
5
0
0
0
0
0
0
0
5
-
-
-
-
100ns
Max
15
3.6
-
-
Max
1)
100
100
50
50
30
30
30
30
Revision 2.01
October 2001
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Units
ms
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A