K6T4016V3C-TF85 SAMSUNG [Samsung semiconductor], K6T4016V3C-TF85 Datasheet - Page 6

• Manufacturer Part Number: K6T4016V3C-TF85
• Description: 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

TIMING DIAGRAMS
K6T4016V3C, K6T4016U3C Family
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
UB, LB
OE
Data out
t
HZ
levels.
interconnection.
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
BLZ
t
t
(Address Controlled
HZ
(WE=V
OH
OLZ
(Max.) is less than
t
AA
t
CO
IH
t
t
BA
)
OE
t
AA
6
,
t
RC
CS=OE=V
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
, UB or/and LB=V
Data Valid
t
OH
t
CMOS SRAM
OHZ
t
IL
BHZ
t
)
HZ
Revision 2.01
October 2001