K6R4004C1C-C10 SAMSUNG [Samsung semiconductor], K6R4004C1C-C10 Datasheet - Page 3

• Manufacturer Part Number: K6R4004C1C-C10
• Description: 1Mx4 Bit High Speed Static RAM(5V Operating).
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at extended and industrial temperature range.
** V
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
The above parameters are also guaranteed at extended and industrial temperature range.
CC
IH
IL
=5.0V 5%, Temp.=25 C.
(Max) = V
(Min) = -2.0V a.c(Pulse Width
Parameter
CC
CC
Parameter
+ 2.0V a.c (Pulse Width
Supply Relative to V
Item
Parameter
(T
A
=25 C, f=1.0MHz)
Symbol
Commercial
Extended
Industrial
V
8ns) for I
SS
V
I
V
OH1**
I
I
I
SB1
I
LO
CC
SB
LI
OH
OL
SS
8ns) for I
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
20mA.
OL
OH
OH1
IN
OUT
IN
=8mA
=V
=-4mA
=-0.1mA
V
Symbol
=V
20mA.
SS
IH
IL,
CC
Symbol
V
V
V
V
SS
or OE=V
V
-0.2V or V
CC
SS
to V
IH
C
IL
C
IN
to V
I/O
IN
=V
CC
IH
CC
CC
or V
IH
-0.2V,
IH
IN
or WE=V
(
Test Conditions
- 3 -
T
IL,
V
Symbol
0.2V
A
IN
T
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
I
V
OUT
-0.5**
, V
P
Test Conditions
T
T
T
STG
Min
CC
4.5
2.2
D
A
A
A
0
OUT
=0mA
(T
IL
V
V
A
I/O
IN
=0 to 70 C)
=0V
=0V
Com.
Ext.
Ind.
Typ
5.0
-0.5 to V
0
-
-
-0.5 to 7.0
-65 to 150
-25 to 85
-40 to 85
Rating
0 to 70
1.0
10ns
12ns
15ns
20ns
10ns
12ns
15ns
20ns
MIN
CC
-
-
+0.5
V
CC
PRELIMINARY
Max
5.5
+0.5***
0.8
Min
0
2.4
-2
-2
CMOS SRAM
-
-
-
-
-
-
-
-
-
-
-
-
Max
8
7
Max
3.95
160
150
140
130
175
165
155
145
0.4
60
10
2
2
-
Unit
W
V
V
C
C
C
C
March 2000
Unit
V
V
V
V
Unit
pF
pF
Rev 3.0
Unit
mA
mA
V
V
V
A
A