HMC564LC4_09 HITTITE [Hittite Microwave Corporation], HMC564LC4_09 Datasheet

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HMC564LC4_09

Manufacturer Part Number
HMC564LC4_09
Description
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
8 - 172
8
Typical Applications
The HMC564LC4 is ideal for use as a LNA or driver
amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v02.1208
= +25° C, Vdd 1, 2 = +3V
Order On-line at www.hittite.com
Features
Noise Figure: 1.8 dB
Gain: 17 dB
OIP3: 25 dBm
Single Supply: +3V @ 51 mA
50 Ohm Matched Input/Output
RoHS Compliant 4 x 4 mm Package
General Description
The HMC564LC4 is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifi er housed in a
leadless RoHS compliant 4x4mm SMT package.
Operating from 7 to 14 GHz, the HMC564LC4 features
extremely fl at small signal gain of 17 dB as well as
1.8 dB noise fi gure and +25 dBm output IP3 across
the operating band. This self-biased LNA is ideal for
microwave radios due to its consistent output power,
single +3V supply operation, and DC blocked RF
I/O’s.
GaAs SMT PHEMT LOW NOISE
Min.
14
10
AMPLIFIER, 7 - 14 GHz
7 - 14
HMC564LC4
Typ.
0.02
14.5
1.8
25
17
15
14
13
51
Max.
0.03
2.2
75
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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HMC564LC4_09 Summary of contents

Page 1

Typical Applications The HMC564LC4 is ideal for use as a LNA or driver amplifi er for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Functional Diagram Electrical Specifi cations, Frequency ...

Page 2

Broadband Gain & Return Loss S21 S11 0 S22 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C -5 +85C -40C -10 -15 -20 ...

Page 3

P1dB vs. Temperature FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 - FREQUENCY (GHz) For price, delivery, and to place ...

Page 4

Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) +3.5 Vdc RF Input Power (RFIN) +5 dBm (Vdd = +3.0 Vdc) Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 1.16 W (derate 12.9 mW/°C above 85 °C) Thermal Resistance ...

Page 5

Pin Descriptions Pin Number Function 1, 5-8, 9 -14, 18, N/C 20, 21, 22 15, 17 GND 3 RFIN 16 RFOUT 23, 19 Vdd1, Vdd2 Application Circuit Component Value C1, C2 100 pF C5, C6 2.2 ...

Page 6

Evaluation PCB List of Material for Evaluation PCB 116156 Item Description J1 mount SMA Pin 100 pF capacitor, 0402 pkg 2.2μF Capacitor, Tantalum U1 HMC564LC4 ...

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