RFW2N06RLE INTERSIL [Intersil Corporation], RFW2N06RLE Datasheet - Page 2

• Manufacturer Part Number: RFW2N06RLE
• Description: 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET
• Manufacturer: INTERSIL [Intersil Corporation]

Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Electrostatic Discharge Rating, MIL-STD-883, Catagory B(2). . . . . . . . . . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Ambient
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
1. T
2. Pulse test: width 300 s duty cycle
3. Repetitive rating: pulse width limited by maximum junction temperature.
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
= 25
o
C to 125
PARAMETER
PARAMETER
o
C.
GS
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
6-284
T
C
= 25
T
C
2%.
= 25
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
o
V
r
Q
C, Unless Otherwise Specified
BV
Q
t
DS(ON)
t
d(OFF)
t
C
Q
C
V
GS(TH)
I
t
d(ON)
C
R
I
(OFF)
g(TOT)
g
DSS
GSS
(ON)
t
OSS
RSS
SD
rr
g
(TH)
ISS
DSS
t
t
r
f
(5)
JA
I
I
I
V
V
V
T
V
I
I
V
R
V
V
V
V
(Figure 11)
SD
SD
D
D
D
RFW2N06RLE
GS
DS
DS
C
GS
DD
GS
GS
GS
DS
G
=250 A, V
= 2A, V
= 2A, V
= 125
= 2A
= 2A, dl
= 25 (Figures 12, 13, 14)
= Rated BV
= 0.8 x Rated BV
= 0 to 10V
= 0 to 5V
= 0 to 1V
= 25V, V
= V
=-5V to 10V
= 30V, I
DS
o
GS
GS
C
, I
SD
D
GS
D
GS
TEST CONDITIONS
= 5V (Figure 8)
= 4.3V (Figure 8)
/dt = 100A/ s
TEST CONDITIONS
= 2A, R
= 250 A
DSS
= 0V
= 0V, f = 1MHz
V
I
R
(Figures 12, 15, 16)
, V
G(REF)
DD
L
DSS
L
= 24
GS
= 15 , V
= 48V, I
, V
= 0V
J,
=0.5mA,
GS
T
DGR
STG
pkg
DM
GS
DS
AS
= 0V
D
GS
D
D
L
= 2A,
= 5V,
Refer to UIS Curve
RFW2N06RLE
-55 to 150
-5 to 10
MIN
0.009
MIN
1.09
300
260
60
-
-
60
60
14
1
2
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
TYP
535
175
0.6
13
42
95
45
20
11
32
-
-
-
-
-
-
-
-
-
-
-
-
MAX
MAX
200
160
200
100
200
115
1.2
1.0
25
100
30
16
2
1
-
-
-
-
-
-
-
-
UNITS
W/
KV
o
o
o
W
V
V
A
A
V
C
C
C
o
UNITS
UNITS
C
o
m
m
C/W
nA
nC
nC
nC
ns
ns
ns
ns
ns
ns
pF
pF
pF
ns
V
V
V
A
A