HMC566_09 HITTITE [Hittite Microwave Corporation], HMC566_09 Datasheet

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HMC566_09

Manufacturer Part Number
HMC566_09
Description
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
1 - 90
1
Typical Applications
The HMC566 is ideal for use as a LNA or driver ampli-
fi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v00.0306
= +25° C, Vdd 1, 2, 3, 4 = +3V
Order On-line at www.hittite.com
Min.
17
9
29 - 33
0.03
23.5
Typ.
14.5
2.8
20
15
12
80
9
Features
Noise Figure: 2.8 dB
Gain: 20 dB
OIP3: 23.5 dBm
Single Supply: +3V @ 80 mA
50 Ohm Matched Input/Output
Small Size: 2.54 x 0.98 x 0.10 mm
General Description
The HMC566 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifi er (LNA) chip which operates
from 29 to 36 GHz. The HMC566 provides 20 dB of
small signal gain, 2.8 dB of noise fi gure and output
IP3 of 23.5 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, slightly positive gain slope,
single +3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
fi xture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
GaAs PHEMT MMIC LOW NOISE
Max.
0.05
3.3
AMPLIFIER, 29 - 36 GHz
Min.
19
9
33 - 36
0.03
23.5
Typ.
14.5
2.8
22
15
12
80
8
HMC566
Max.
0.05
3.3
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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HMC566_09 Summary of contents

Page 1

Typical Applications The HMC566 is ideal for use as a LNA or driver ampli for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Functional Diagram Electrical Specifi cations, ...

Page 2

Broadband Gain & Return Loss S21 S11 0 S22 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C -5 +85C -55C -10 ...

Page 3

P1dB vs. Temperature FREQUENCY (GHz) Output IP3 vs. Temperature FREQUENCY (GHz) For price, delivery, and ...

Page 4

Absolute Maximum Ratings Drain Bias Voltage (Vdd1 +3.5 Vdc RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 0.82 W (derate 9.6 mW/°C above 85 °C) Thermal ...

Page 5

Pad Descriptions Pad Number Function Vdd1 OUT Die Bottom GND Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA ...

Page 6

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...

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