H57V2562GFR-60C HYNIX [Hynix Semiconductor], H57V2562GFR-60C Datasheet - Page 4

• Manufacturer Part Number: H57V2562GFR-60C
• Description: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
• Manufacturer: HYNIX [Hynix Semiconductor]

256Mb Synchronous DRAM(16M x 16) FEATURES
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ORDERING INFORMATION
Note:
1. H57V2562GFR-XXC Series: Normal power & Commercial temp.
2. H57V2562GFR-XXL Series: Low Power & Commercial temp.
Rev 1.0 / Aug. 2009
H57V2562GFR-60C
H57V2562GFR-75C
H57V2562GFR-60L
H57V2562GFR-75L
This product is in compliance with the directive pertaining of RoHS.
Standard SDRAM Protocol
Internal 4bank operation
Power Supply Voltage : V
All device pins are compatible with LVTTL interface
Low Voltage interface to reduce I/O power
8,192 Refresh cycles / 64ms
Programmable CAS latency of 2 or 3
Programmable Burst Length and Burst Type
Commercial Temp : 0
Package Type : 54ball, 0.8mm pitch FBGA
Part Number
- 1, 2, 4 or 8 for Interleave Burst
- 1, 2, 4, 8 or full page for Sequential Burst
o
Frequency
C ~ 70
166MHz
133MHz
166MHz
133MHz
Clock
DD
= 3.3V, V
o
C Operation
Latency
DDQ
CAS
3
3
3
3
= 3.3V
Power
Normal
Power
Low
Voltage
3.3V
Synchronous DRAM Memory 256Mbit
4Banks x 4Mbits
Organization
x16
H57V2562GFR Series
Interface
LVTTL
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