H55S1G22MFP-60 HYNIX [Hynix Semiconductor], H55S1G22MFP-60 Datasheet - Page 29

• Manufacturer Part Number: H55S1G22MFP-60
• Description: 1Gb (32Mx32bit) Mobile SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

READ to READ
Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the
new burst follows either the last element of a completed burst or the last desired element of a longer burst that is
being truncated.
When another read command is executed at the same ROW address of the same bank as the preceding read com-
mand execution, the second read can be performed after an interval of no less than 1 clock. Even when the first com-
mand is a burst read that is not yet finished, the data read by the second command will be valid.
A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive Reads are
shown in Figure. Full-speed random read accesses within a page or pages can be performed as shown in Fig.
Rev 1.2 / Jun. 2008
CLK
Command
Address
DQ
DQ
BA, Col
READ
a
CL =2
CL =3
NOP
Consecutive Read Bursts
Do
BA, Col
READ’
a0
b
1Gbit (32Mx32bit) Mobile SDR Memory
Do
Do
a1
a0
H55S1G(2/3)2MFP Series
NOP
Do
Do
a1
b0
Don't Care
Do
Do
b0
b1
11
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