HMC590_09 HITTITE [Hittite Microwave Corporation], HMC590_09 Datasheet
HMC590_09
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HMC590_09 Summary of contents
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Typical Applications The HMC590 is ideal for use as a power amplifi er for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain ...
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Broadband Gain & Return Loss S21 S11 5 S22 0 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 -10 -15 -20 ...
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P1dB vs. Current 6.5 7 7.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm 6.5 7 7.5 FREQUENCY (GHz) ...
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Gain & Power vs. Supply Voltage @ 8 GHz Gain P1dB Psat 6.5 7 Vdd SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature 820 mA 0 -10 -20 -30 +25C ...
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Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +7.0 Vdc) 3 Channel Temperature Continuous Pdiss (T= 85 °C) (derate 67 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature ...
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Pad Descriptions Pad Number Function 1 RFIN Gate control for amplifi er. Adjust to achieve Idd of 820 mA. Please follow “MMIC Amplifi er Biasing Procedure” 2 Vgg Application Note. External bypass capacitors of 100 pF and Power Supply ...
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Assembly Diagram 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER GHz ...
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Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...