K7R321884M-FC16 SAMSUNG [Samsung semiconductor], K7R321884M-FC16 Datasheet - Page 14

• Manufacturer Part Number: K7R321884M-FC16
• Description: 1Mx36 & 2Mx18 QDRTM II b4 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7R321884M
K7R323684M
TIMING WAVE FORMS OF READ, WRITE AND NOP
K
K
SA
W
R
D(Data In)
D(Data Out)
C
C
Note: 1. If address A3=A2, data Q3-1=D2-1, data Q3-2=D2-2 , data Q3-3=D2-3, data Q3-4=D2-4
2.BWx ( NWx ) assumed active.
Write data is forwarded immediately as read results.
A1
READ
A2
WRITE
Q1-1
D2-1
A3
READ
- 14 -
1Mx36 & 2Mx18 QDR
D2-2
Q1-2
D2-3
Q1-3
A4
WRITE
D2-4
Q1-4
D4-1
Q3-1
NOP
Don t Care
TM
D4-2
Q3-2
II b4 SRAM
Q3-3
D4-3
Undefined
Dec. 2003
Rev 2.0
NOP