DMN2013UFDE DIODES [Diodes Incorporated], DMN2013UFDE Datasheet - Page 4

• Manufacturer Part Number: DMN2013UFDE
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

DMN2013UFDE
D
atasheet number: DS35701 Rev. 5 - 2
10,000
0.01
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
1,000
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.1
10
0
-50
100
0.01
1
DUT on 1 * MRP Board
T
T = 25°C
V
Single Pulse
0
J(max)
A
GS
-25
f = 1MHz
= 8V
T , JUNCTION TEMPERATURE ( C)
V , DRAIN-SOURCE VOLTAGE (V)
= 150°C
J
DS
Fig. 11 SOA, Safe Operation Area
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
R
Limited
0.1
0
P
DS(on)
DC
W
5
= 10s
P
P
W
W
25
I = 250µA
= 1s
= 100ms
D
P
W
= 10ms
50
P
1
W
C
10
C
C
= 1ms
rss
iss
oss
I = 1mA
D
75
100
10
P
15
W
°
125
= 100µs
100
150
www.diodes.com
20
4 of 6
20
15
10
10
5
0
8
6
4
2
0
0
0
V
DS
Fig. 8 Diode Forward Voltage vs. Current
5
0.2
V , SOURCE-DRAIN VOLTAGE (V)
= 10V, I =
SD
Q
g
10
, TOTAL GATE CHARGE
D
0.4
Fig. 10 Gate Charge
8.5
15
A
T = 25°C
A
0.6
20
25
0.8
DMN2013UFDE
30
(nC)
1.0
© Diodes Incorporated
35
1.2
40
May 2012