DMN2013UFDE DIODES [Diodes Incorporated], DMN2013UFDE Datasheet - Page 5

• Manufacturer Part Number: DMN2013UFDE
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

Package Outline Dimensions
Suggested Pad Layout
DMN2013UFDE
D
atasheet number: DS35701 Rev. 5 - 2
0.001
0.01
0.1
0.00001
1
X (6x)
E
Z(4X)
Y3
D = Single Pulse
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
A
E2
Y2
0.0001
D2
e
X2
D
0.001
L1
C
b1
Fig. 12 Transient Thermal Resistance
t1, PULSE DURATION TIME (sec)
X1
0.01
b(6X)
A1
K1
Y (2x)
K2
www.diodes.com
A3
Y1
L(2X)
5 of 6
0.1
Dimensions
1
Dim
A1
A3
b1
D2
E2
L1
K1
K2
A
D
b
E
L
Z
e
X1
X2
Y1
Y2
Y3
All Dimensions in mm
C
X
Y
0.185
U-DFN2020-6
0.57
0.25
1.95
0.85
1.95
1.40
0.25
0.82
Min
—
—
—
—
—
0
10
Type E
R
R
Duty Cycle, D = t1/t2
θJA(t)
θ
JA
(in mm)
Value
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
0.285
= 65 C/W
Max
0.63
0.05
0.35
2.05
1.05
2.05
1.60
0.35
0.92
= r
—
—
—
—
—
(t)
°
* R
100
θ
JA
0.235
0.305
0.225
0.60
0.03
0.15
0.30
2.00
0.95
2.00
1.50
0.65
0.30
0.87
0.20
Typ
DMN2013UFDE
1,000
© Diodes Incorporated
May 2012