DMN2027USS-13 DIODES [Diodes Incorporated], DMN2027USS-13 Datasheet - Page 4

• Manufacturer Part Number: DMN2027USS-13
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transfer Admittance (Note 6 & 7)
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Notes:
DMN2027USS
Document number: DS35038 Rev. 1 - 2
6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
30
25
20
15
10
5
0
0
V , DRAIN-SOURCE VOLTAGE (V)
Characteristic
DS
Fig. 1 Typical Output Characteristic
V
GS
0.5
V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
V
GS
= 4.0V
GS
= 4.5V
= 10V
1
@T
A
= 25°C unless otherwise specified
V
V
GS
GS
1.5
= 2.0V
= 1.8V
Symbol
R
BV
V
DS (ON)
t
t
2
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
www.diodes.com
R
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
g
|
4 of 8
Min
0.6
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
11.67
12.49
35.89
12.33
20
15
10
1000
1.51
11.6
Typ
166
158
1.0
0.7
7.0
2.7
3.4
5
0
11
15
16
-
-
-
0
±100
0.5
Max
V
Fig. 2 Typical Transfer Characteristic
1.0
1.3
1.3
20
28
GS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
, GATE-SOURCE VOLTAGE (V)
T = 125°C
A
1
T = 150°C
Diodes Incorporated
Unit
A
mΩ
μA
nC
nA
pF
ns
V
V
S
V
Ω
A Product Line of
1.5
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
R
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
GS
G
= 6Ω , I
T = -55°C
= 0V, I
= 20V, V
= ±12V, V
= V
= 4.5V, I
= 2.5V, I
= 5V, I
= 0V, I
= 10V, V
= 0V, V
= 2.5V
= 4.5V
= 4.5V, V
A
2
T = 25°C
DMN2027USS
GS
A
Test Condition
T = 85°C
, I
D
D
D
S
A
GS
D
= 1A
= 9.4A
= 1.3A
= 250μA
D
D
GS
GS
DS
= 250μA
DS
= 9.4A
= 8.3A
= 0V, f = 1MHz
2.5
= 0V
= 0V,
© Diodes Incorporated
V
I
= 10V,
= 0V
D
DS
= 9.4A
October 2010
= 10V
3