DMN2027USS-13 DIODES [Diodes Incorporated], DMN2027USS-13 Datasheet - Page 5

• Manufacturer Part Number: DMN2027USS-13
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

DMN2027USS
Document number: DS35038 Rev. 1 - 2
3.0
2.5
2.0
1.5
1.0
0.5
0.030
0.025
0.020
0.015
0.010
0.005
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
0
-50 -25
0
Fig. 5 On-Resistance Variation with Temperature
V
GS
I = 5A
D
T , AMBIENT TEMPERATURE (°C)
= 2.5V
A
T , AMBIENT TEMPERATURE (°C)
V
A
I , DRAIN-SOURCE CURRENT (A)
vs. Drain Current and Gate Voltage
GS
I = 10A
D
D
0
= 4.5V
Fig. 3 Typical On-Resistance
0
5
25
25
50
V
V
GS
GS
50
10
= 2.5V
= 4.5V
I = 250µA
D
75
75
100
100
I = 1mA
15
D
125 150
125 150
20
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0.030
0.025
0.020
0.015
0.010
0.005
0.030
0.025
0.020
0.015
0.010
0.005
20
16
12
8
4
0
0
0
0
0
-50 -25
Fig. 6 On-Resistance Variation with Temperature
V
Fig. 8 Diode Forward Voltage vs. Current
GS
0.2
V , SOURCE-DRAIN VOLTAGE (V)
V
SD
= 4.5V
vs. Drain Current and Temperature
GS
I = 5A
D
T , AMBIENT TEMPERATURE (°C)
= 2.5V
A
Fig. 4 Typical On-Resistance
5
I , DRAIN CURRENT (A)
V
D
0
0.4
I = 10A
GS
D
Diodes Incorporated
= 4.5V
A Product Line of
25
0.6
10
T = 25°C
50
A
0.8
DMN2027USS
75
15
T = 125°C
T = 85°C
T = 150°C
T = 25°C
T = -55°C
100
A
A
A
A
A
1.0
© Diodes Incorporated
October 2010
125 150
1.2
20