UPA809T-T1 NEC [NEC], UPA809T-T1 Datasheet - Page 2

• Manufacturer Part Number: UPA809T-T1
• Description: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
h
2
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
h
FE
FE
Notes 1. Pulse Measurement: Pw
CLASSIFICATION
h
Ratio
Marking
FE
Rank
Value
PARAMETER
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
80 to 160
T88
KB
SYMBOL
h
FE1
|S
|S
I
I
h
NF
NF
C
CBO
EBO
f
f
21
21
/h
FE
T
T
re
|
|
2
2
FE2
V
V
V
V
V
V
V
V
V
V
V
A smaller value among
h
A larger value among
h
CB
EB
CE
CE
CE
CB
CE
CE
CE
CE
CE
FE
FE
350 s, Duty cycle
A
of h
of h
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 25 C)
FE
FE
1 = Q1, Q2
2 = Q1, Q2
C
C
C
C
C
C
C
C
C
E
E
= 0
= 0
= 3 mA
= 3 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 0, f = 1 MHz
= 3 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 7 mA, f = 2 GHz
= 3 mA
CONDITION
Note 1
2 %
Note 2
MIN.
0.85
4.0
2.5
80
TYP.
0.75
4.5
9.0
3.5
6.5
1.7
1.5
MAX.
0.85
160
0.1
0.1
2.5
UNIT
GHz
GHz
pF
dB
dB
dB
dB
PA809T
A
A