UPA826TF-T1 NEC [NEC], UPA826TF-T1 Datasheet - Page 2

• Manufacturer Part Number: UPA826TF-T1
• Description: NPN SILICON EPITAXIAL TWIN TRANSISTOR
• Manufacturer: NEC [NEC]

Note: 1.Operation in excess of any one of these parameters
TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
2.When operating both devices, the power dissipation for
T
J
may result in permanent damage.
either device should not exceed 110 mW.
200
100
60
50
40
30
20
10
0
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector to Emitter Voltage, V
TOTAL POWER DISSIPATION vs.
Ambient Temperature, T
COLLECTOR CURRENT vs.
PARAMETERS
AMBIENT TEMPERATURE
1
2 Elements
1 Element
50
2
2
3
100
4
A
UNITS
Free Air
( C)
l
mW
mW
B
mA
CE
=100 A
5
V
V
V
C
C
500 A
400 A
300 A
200 A
(V)
1
150
(T
6
-65 to +150
RATINGS
A
(T
= 25 C)
150
200
150
30
9
6
2
A
= 25˚C)
200
100
50
40
30
20
10
0
0
0.1 0.2
V
CE
= 3 V
COLLECTOR CURRENT vs.
DC Base Voltage, V
COLLECTOR CURRENT
Collector Current, lc (mA)
DC CURRENT GAIN vs.
0.5
DC BASE VOLTAGE
1
V
CE
2
= 3 V
0.5
5
10
BE
5 V
20
(V)
50
100
1.0