K4E151611 Samsung, K4E151611 Datasheet - Page 4

• Manufacturer Part Number: K4E151611
• Description: 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• Manufacturer: Samsung

K4E171611D, K4E151611D
K4E171612D, K4E151612D
DC AND OPERATING CHARACTERISTICS
I
I
I
I
I
I
I
I
*Note :
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
Symbol
* : Operating Current (RAS and UCAS, LCAS, Address cycling @t
* : RAS-only Refresh Current (UCAS=LCAS=V
* : Hyper Page Mode Current (RAS=V
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @t
: Standby Current (RAS=UCAS=LCAS=W=V
: Standby Current (RAS=UCAS=LCAS=W=V
: Battery back-up current, Average power supply current, Battery back-up mode
: Self Refresh Current
I
I
I
I
I
I
I
I
Input high voltage(V
DQ=Don t care, T
T
RAS=UCAS=LCAS=V
DQ0 ~ DQ15=V
CCS
CC1
CC2
CC3
CC4
CC5
CC6
CC7
RAS
I
I
address can be changed maximum once within one Hyper page mode cycle time, t
CC1
CC
=T
is specified as an average current. In I
, I
RAS
CC3
min~300ns
, I
Don t care
Don t care
Don t care
Don t care
CC4
Normal
Normal
Power
CC
L
L
L
L
RC
and I
-0.2V, 0.2V or Open
IH
=31.25us(4K/L-ver), 125us(1K/L-ver)
)=V
IL
CC6
, W=OE=A0 ~ A11=V
CC
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
-0.2V, Input low voltage(V
Don t care
Don t care
Don t care
Don t care
Speed
-45
-50
-60
-45
-50
-60
-45
-50
-60
-45
-50
-60
IL
, UCAS or LCAS, Address cycling @t
IH
CC
CC1
IH
K4E171612D
CC
)
, RAS, Address cycling @t
-0.2V)
-0.2V or 0.2V,
, I
100
100
100
200
100
300
150
110
0.5
CC3
90
80
90
80
90
90
80
1
1
IL
and I
(Continued)
)=0.2V, UCAS, LCAS=0.2V,
CC6,
RC
K4E151612D
address can be changed maximum once while RAS=V
=min.)
RC
150
140
130
150
140
130
110
100
200
150
140
130
200
150
0.5
90
1
1
=min.)
RC
HPC
=min.)
Max
=min.)
K4E171611D
HPC
100
100
100
200
350
200
110
110
.
90
80
90
80
90
90
80
2
1
1
K4E151611D
CMOS DRAM
150
140
130
150
140
130
100
200
150
140
130
250
200
110
90
2
1
1
IL
. In I
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
CC4
,