TLP371_07 TOSHIBA [Toshiba Semiconductor], TLP371_07 Datasheet

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TLP371_07

Manufacturer Part Number
TLP371_07
Description
GaAs Ired & Photo−Transistor
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
photo−transistor which has an integrated base−emitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 is no−base internal connection for high−EMI environments.
Pin Configurations
1
2
3
Current transfer ratio: 1000% (min) (I
Isolation voltage: 5000 Vrms (min)
UL recognized: UL1577, file no. E67349
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
TLP371
5
4
6
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
(top view)
TLP371, TLP372
1
2
3
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
F
= 1mA)
TLP372
4
6
5
1
Weight: 0.4g
TOSHIBA
TLP371,TLP372
11−7A8
2007-10-01
Unit in mm

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TLP371_07 Summary of contents

Page 1

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP371, TLP372 Office Machine Household Use Equipment Telecommunication Solid State Relay Programmable Controllers The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected photo−transistor which ...

Page 2

Absolute Maximum Ratings Characteristic Forward current Forward current derating (Ta ≥ 39°C) Peak forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Collector−emitter voltage Collector−base voltage (TLP371) Emitter−collector voltage Emitter−base voltage (TLP371) Collector current Power dissipation Power dissipation derating (Ta ...

Page 3

Individual Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector−base breakdown voltage (TLP371) Emitter−base breakdown voltage (TLP371) Collector dark current Collector dark current (TLP371) Collector dark current (TLP371) DC forward current gain (TLP371) Capacitance ...

Page 4

Isolation Characteristics Characteristic Capacitance (input to output) Isolation resistance Isolation voltage Switching Characteristics Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Turn−on time Storage time Turn−off time Fig.1: Switching time test circuit I ...

Page 5

I – 100 − Ambient temperature Ta (℃) I – 5000 Pulse width 3000 ≤ 100μ 25°C 1000 500 300 100 50 30 ...

Page 6

I – 25°C 10mA 4mA 140 120 100 0.6 0.8 1.0 1.2 1.4 1.6 Collector−emitter voltage V CE (V) Switching Time – 1000 Ta = 25° ...

Page 7

I – V CEO 25° OPEN MΩ (TLP371) − 100 Collector−emitter voltage V CE (V) I – 120 V ...

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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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