HY5DU281622ETP-25 HYNIX [Hynix Semiconductor], HY5DU281622ETP-25 Datasheet - Page 23

• Manufacturer Part Number: HY5DU281622ETP-25
• Description: 128M(8Mx16) gDDR SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 1.0 / Oct. 2005
DC CHARACTERISTICS II
Note :
1. I
2. Min. of t
Operating Current
Operating Current
Precharge Standby Cur-
rent in Power Down
Mode
Precharge Standby Cur-
rent in Non Power Down
Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down
Mode
Burst Mode Operating
Current
Auto Refresh Current
Self Refresh Current
Operating Current - Four
Bank Operation
DD1, IDD4
Parameter
RFC
and I
(Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
DD5
depend on output loading and cycle rates. Specified values are measured with the output open.
Symbol
I
I
I
I
I
I
I
I
I
I
DD2N
DD3N
DD2P
DD3P
DD0
DD1
DD4
DD5
DD6
DD7
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM
and DQS inputs changing twice per clock
cycle; address and control inputs chang-
ing once per clock cycle
Burst length=2, One bank active
t
CKE ≤ V
CKE ≥ V
min, Input signals are changed one time
during 2clks
CKE ≤ V
CKE ≥ V
t
time during 2clks
t
All banks active
t
All banks active
CKE ≤ 0.2V
Four bank interleaving with BL=4, Refer
to the following page for detailed test
condition
RC
CK
CK
RC
=min, Input signals are changed one
≥ t
≥ t
(TA=0 to 70
≥ t
CK
RFC
RC
IH
IL
IL
IH
(min), I
(min), I
(max), t
(max), t
(min),
(min), /CS ≥ V
(min), /CS ≥ V
Test Condition
OL
o
OL
C, Voltage referenced to V
CK
CK
=0mA
=0mA
=min
=min
IH
IH
(min), t
(min),
CK
=
SS
180
180
100
140
280
280
430
36
= 0V)
40
40
4
Speed
170
170
130
260
260
410
40
90
40
4
4
1HY5DU281622ETP
160
160
120
240
240
390
40
80
40
5
4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1,2
1
1
1
23