HY5DU283222AF-5 HYNIX [Hynix Semiconductor], HY5DU283222AF-5 Datasheet - Page 2

• Manufacturer Part Number: HY5DU283222AF-5
• Description: 128M(4Mx32) GDDR SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Revision History
Rev. 0.7 / Jun. 2004
Revision
0.11
No.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Defined target spec.
500MHz speed bin added
Defined IDD specification
1) Added 222MHz with CL3 and tCK_max=10ns at HY5DU283222AF-36
2) Changed VDD_min value of HY5DU283222AF-36 from 2.375V to 2.2V
3) Changed AC parameters value of HY5DU283222AF-28/33
4) Changed IDD2N target specification
5) Changed tCK_max value of HY5DU283222AF-33/36 from 6ns to 10ns
Changed CAS Latency of HY5DU283222AF-28 from CL5 to CL4
Changed tRAS_max Value from 120K to 100K in All Frequency
Insert Overshoot/ Under Specification
Insert tDSS/ tDSH parameter
Added 250MHz/ 200MHz speed bin
- tRCDRD/tRP : from 6 tCK to 5 tCK
- tDAL : from 9 tCK to 8 tCK
- tRFC : from 19 tCK to 17 tCK
History
Draft Date
HY5DU283222AF
Nov. 2002
Dec. 2002
June 2003
Aug. 2003
Feb. 2003
Sep. 2003
Mar. 2003
Jun. 2004
Remark
2