MX25L3225DM2I-10G MCNIX [Macronix International], MX25L3225DM2I-10G Datasheet - Page 43

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MX25L3225DM2I-10G

Manufacturer Part Number
MX25L3225DM2I-10G
Description
32M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH
Manufacturer
MCNIX [Macronix International]
Datasheet
P/N: PM1432
ERASE AND PROGRAMMING PERFORMANCE
Note:
1. Typical program and erase time assumes the following conditions: 25° C, 3.3V, and checker board pattern.
2. Under worst conditions of 85° C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command.
4. The maximum chip programming time is evaluated under the worst conditions of 0C, VCC=3.0V, and 100K cycle with
LATCH-UP CHARACTERISTICS
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
PARAMETER
Write Status Register Cycle Time
Sector Erase Time
Block Erase Time
Chip Erase Time
Byte Program Time (via page program command)
Page Program Time
Erase/Program Cycle
90% confidence level.
43
Min.
TYP. (1)
100,000
0.7
1.4
40
90
25
9
MX25L3225D
-100mA
-1.0V
-1.0V
MIN.
Max. (2)
100
300
300
50
2
5
REV. 0.00, SEP. 19, 2008
VCC + 1.0V
2 VCCmax
+100mA
cycles
UNIT
MAX.
ms
ms
ms
us
s
s

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