RF2001T3D_10 ROHM [Rohm], RF2001T3D_10 Datasheet
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Manufacturer Part Number
RF2001T3D_10
Description
Fast recovery diodes
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©2010 ROHM Co., Ltd. All rights reserved.
General rectification
1) Cathode common type.
2) Ultra Low V
3) Very fast recovery
4) Low switching loss
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
Storage temoerature
(*1)Business frequency, Rating of R-load, Tc=113C 1/2 Io per diode
Forward voltage
Reverse current
Reverse recovery time
Fast recovery diodes
Applications
Features
Construction
Absoslute maximum ratings (Ta=25C)
Electrical characteristic (Ta=25C)
(TO-220)
RF2001T3D
F
Parameter
Parameter
1.2
1.3
0.8
Dimensions (Unit : mm)
ROHM : TO220FN
(1) (2) (3)
①
10.0±0.3
0.1
Symbol
Symbol
Tstg
Manufacture Date
V
I
V
FSM
V
trr
Io
Tj
I
①
RM
R
R
F
Min.
-
-
-
1/3
-55 to +150
Limits
0.7±0.1
300
300
100
150
Typ.
20
-
-
-
0.05
4.5±0.3
0.1
Max.
1.3
10
25
2.6±0.5
2.8±0.2
0.1
Unit
Unit
C
C
μA
ns
V
V
A
A
V
I
V
I
Structure
F
F
=10A
R
=0.5A,I
=300V
(1) (2) (3)
Conditions
R
2010.02 - Rev.D
=1A,Irr=0.25*I
R
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RF2001T3D_10 Summary of contents
Fast recovery diodes RF2001T3D Applications General rectification Features 1) Cathode common type. (TO-220) 2) Ultra Low Very fast recovery 4) Low switching loss Construction Silicon epitaxial planar Absoslute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse ...
RF2001T3D Electrical characteristics curves 10 Ta=150C 1 Ta=125C Ta=25C Ta=75C 0.1 Ta=-25C 0.01 0.001 FORWARD VOLTAGE:V (mV ...
RF2001T3D D=t D=1/2 DC Tj=150 Sin(=180 100 125 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) www.rohm.com ©2010 ROHM Co., Ltd. ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
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