AS4LC4M16DG-5S/XT AUSTIN [Austin Semiconductor], AS4LC4M16DG-5S/XT Datasheet

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AS4LC4M16DG-5S/XT

Manufacturer Part Number
AS4LC4M16DG-5S/XT
Description
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM
Manufacturer
AUSTIN [Austin Semiconductor]
Datasheet
4 MEG x 16 DRAM
Extended Data Out (EDO) DRAM
FEATURES
• Single +3.3V ±0.3V power supply.
• Industry-standard x16 pinout, timing, functions, and
package.
• 12 row, 10 column addresses
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS\-BEFORE-RAS\ (CBR) REFRESH
distributed across 64ms
• Optional self refresh (S) for low-power data retention
• Level 1 Moisture Sensitivity Rating, JEDEC J-STD-020
OPTIONS
• Package(s)
• Timing
• Refresh Rates
• Operating Temperature Ranges
NOTE: The \ symbol indicates signal is active LOW.
*Contact factory for availability. Self refresh option available on IT
version only.
KEY TIMING PARAMETERS
AS4LC4M16
Rev. 1.1 6/05
-5
-6
50-pin TSOP (400-mil)
50ns access
60ns access
Standard Refresh
Self Refresh
Military (-55°C to +125°C)
Industrial (-40°C to +85°C)
104ns 60ns
84ns
50ns
20ns
25ns
Austin Semiconductor, Inc.
25ns
30ns
MARKINGS
XT
None
IT
-5
-6
S*
DG
13ns
15ns
10ns
8ns
1
Configuration
Refresh
Row Address
Column Addressing
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
For more products and information
www.austinsemiconductor.com
please visit our web site at
PIN ASSIGNMENT
50-Pin TSOP (DG)
(Top View)
AS4LC4M16
4 Meg x 16
A0-A11
A0-A9
4K
DRAM
DRAM
DRAM
DRAM
DRAM

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