AS4LC4M16DG-5S/XT AUSTIN [Austin Semiconductor], AS4LC4M16DG-5S/XT Datasheet - Page 8

• Manufacturer Part Number: AS4LC4M16DG-5S/XT
• Description: 4 MEG x 16 DRAM Extended Data Out (EDO) DRAM
• Manufacturer: AUSTIN [Austin Semiconductor]

I
(V
AS4LC4M16
Rev. 1.1 6/05
STANDBY CURRENT: TTL
RAS\ = CAS\ = V
STANDBY CURRENT: CMOS
(RAS\ = CAS\ > V
Other inputs: V
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS\, CAS\, address cycling: t
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS\ = V
REFRESH CURRENT: RAS\-ONLY
Average power supply current
(RAS\ cycling, CAS\ = V
REFRESH CURRENT: CBR
Average power supply current
(RAS\, CAS\, address cycling: t
REFRESH CURRENT: Extended ("S" version only)
Average power supply current: CAS\ = 0.2V or CBR cycling;
RAS\ = t
D
REFRESH CURRENT: Self ("S" version only)
Average power supply current: CBR with RAS\ > t
and CAS\ held LOW; WE\ = V
D
CC
IN
IN
CC
= V
= V
OPERATING CONDITIONS AND MAXIMUM LIMITS
= +3.3V ±0.3V)
CC
CC
RAS
IL
- 0.2V or 0.2V (D
- 0.2V or 0.2V (D
, CAS\, address cycling: t
(MIN); WE\ = V
IN
IH
> V
CC
CC
- 0.2V; DQs may be left open;
IH
- 0.2V or V
PARAMETERS
: t
RC
IN
IN
CC
Austin Semiconductor, Inc.
may be left open); t
CC
may be left open)
= t
RC
RC
- 0.2V; A0 - A10, OE\ and
- 0.2V; A0 - A10, OE\ and
RC
= t
= t
IN
PC
[MIN])
RC
RC
< 0.2V)
= t
[MIN])
[MIN])
PC
[MIN])
RC
RASS
= 125µS
(MIN)
8
SYM
I
I
I
I
I
I
I
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MAX
165
125
165
165
1.5
-5
1
1
1
MAX
150
120
150
150
1,2,3,5,6
1.5
-6
1
1
1
AS4LC4M16
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
DRAM
DRAM
DRAM
DRAM
DRAM
NOTES
4, 7, 23
4, 7, 37
23, 37
4, 7,
26
26
22