CM75TU-24F_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75TU-24F_09 Datasheet - Page 3

• Manufacturer Part Number: CM75TU-24F_09
• Description: HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
10
150
125
100
10
10
10
75
50
25
–1
COLLECTOR-EMITTER VOLTAGE V
10
COLLECTOR-EMITTER VOLTAGE V
0
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0
6
COLLECTOR-EMITTER SATURATION
–1
T
GATE-EMITTER VOLTAGE V
j
V
T
0.5
VOLTAGE CHARACTERISTICS
= 25°C
2
GE
OUTPUT CHARACTERISTICS
j
=25°C
8
3 5 7
= 0V
CAPACITANCE–V
1
CHARACTERISTICS
V
10
GE
10
1.5
=20V
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
12
2
3 5 7
2
C
14
8
res
2.5
9.5
8.5
10
9
16
1
CE
15
11
10
I
3
C
C
2
I
I
C
C
ies
= 150A
C
GE
3 5 7
= 75A
= 30A
18
oes
3.5
(V)
CE
CE
10
20
(V)
(V)
4
2
3
10
10
10
10
10
10
10
10
2.5
1.5
0.5
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
3
2
1
0
10
0.5
0
COLLECTOR-EMITTER SATURATION
0
V
SWITCHING CHARACTERISTICS
Conditions:
V
V
R
T
Inductive load
T
FORWARD CHARACTERISTICS
GE
VOLTAGE CHARACTERISTICS
j
CC
GE
G
COLLECTOR CURRENT I
j
COLLECTOR CURRENT I
= 125°C
= 25°C
2
= 4.2Ω
1
= 15V
= 600V
= ±15V
FREE-WHEEL DIODE
3
HIGH POWER SWITCHING USE
1.5
HALF-BRIDGE
50
MITSUBISHI IGBT MODULES
5 7
(TYPICAL)
(TYPICAL)
(TYPICAL)
10
2
1
CM75TU-24F
100
2.5
2
T
T
j
j
3
= 25°C
= 125°C
C
C
3
(A)
(A)
5 7
t
t
d(off)
d(on)
EC
t
t
f
r
150
10
3.5
(V)
2
Feb. 2009