CM75TU-24F_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75TU-24F_09 Datasheet - Page 4

• Manufacturer Part Number: CM75TU-24F_09
• Description: HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
20
18
16
14
12
10
REVERSE RECOVERY CHARACTERISTICS
8
6
4
2
0
7
5
3
2
7
5
3
2
2
1
0
10
0
0
I
C
= 75A
200
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
GATE CHARGE Q
3
CHARACTERISTICS
400
GATE CHARGE
5 7
(TYPICAL)
(TYPICAL)
I
t
V
rr
rr
CC
600
10
= 400V
1
800
2
G
V
Conditions:
V
V
R
T
Inductive load
CC
(nC)
j
CC
GE
G
3
E
= 25°C
= 4.2Ω
1000 1200
(A)
= 600V
= 600V
= ±15V
5 7
10
2
4
10
10
10
10
10
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
–3
IGBT part:
Per unit base = R
FWDi part:
Per unit base = R
Single Pulse
T
IMPEDANCE CHARACTERISTICS
2 3 5 7
C
= 25°C
(IGBT part & FWDi part)
TRANSIENT THERMAL
10
HIGH POWER SWITCHING USE
–2
2 3 5 7
MITSUBISHI IGBT MODULES
TIME (s)
th(j–c)
th(j–c)
10
10
–1
–5
2 3 5 7
2 3 5 7
= 0.28K/W
= 0.47K/W
CM75TU-24F
10
10
–4
0
2 3 5 7
2 3 5 7
10
10
10
10
10
3
2
7
5
3
2
7
5
3
2
–3
1
Feb. 2009
–1
–2
–3