APT8011JLL_04 ADPOW [Advanced Power Technology], APT8011JLL_04 Datasheet - Page 4

• Manufacturer Part Number: APT8011JLL_04
• Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
• Manufacturer: ADPOW [Advanced Power Technology]

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
4000
3500
3000
2500
2000
1500
1000
350
300
250
200
150
100
500
204
100
50
50
10
16
12
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
5
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
0
1
V
V
R
T
L = 100µH
E
diode reverse recovery.
FIGURE 14, DELAY TIMES vs CURRENT
DS
I
V
R
T
L = 100µH
T C =+25°C
T J =+150°C
SINGLE PULSE
DD
G
J
ON
D
LIMITED BY R DS (ON)
J
DD
G
OPERATION HERE
= 125°C
= 51A
100 200 300 400 500 600 700 800
= 5
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5
= 533V
includes
20
= 533V
20
Q
g
, TOTAL GATE CHARGE (nC)
30
30
10
E
off
t
d(off)
40
40
V DS = 400V
I
I
D
D
V DS = 160V
E
(A)
(A)
on
50
50
100
60
60
t
V DS = 640V
d(on)
70
70
800
80
80
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
30,000
10,000
14,000
12,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1,000
8,000
6,000
4,000
2,000
100
200
100
120
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
80
60
40
20
1
0
0
10
0
0.3
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery.
D
DS
SD
J
DD
G
DD
J
ON
= 51A
= 125°C
= 125°C
= 5
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
T J =+150°C
= 533V
= 533V
includes
20
0.5
R
10
10
G
, GATE RESISTANCE (Ohms)
30
15 20 25 30 35 40
0.7
20
40
I
D
0.9
T J =+25°C
t
(A)
r
E
on
50
30
t
1.1
f
60
E
off
40
1.3
70
C rss
C oss
45 50
C iss
1.5
50
80
APT8011JLL