CEB6056 CET [Chino-Excel Technology], CEB6056 Datasheet - Page 2

• Manufacturer Part Number: CEB6056
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 50µH, I
AS
= 80A, V
Parameter
DD
= 24V, R
b
G
= 25Ω, Starting T
c
c
J
= 25 C
b
T c = 25 C unless otherwise noted
R
Symbol
V
BV
t
t
C
V
C
Q
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
g
I
GSSF
Q
GSSR
I
t
DSS
t
SD
oss
iss
FS
rss
gd
S
r
f
gs
g
DSS
CEP6056/CEB6056
2
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 60V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 25V, I
= 25V, V
= 30V, I
= 10V, R
= 48V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
D
D
= 250 µ A
= 50A
GS
GS
GEN
DS
DS
= 50A
= 50A,
= 250 µ A
= 20A
= 50A,
= 0V
= 0V,
= 0V
= 0V
= 3.6Ω
Min
60
2
3215
Typ
375
215
21
27
15
58
15
77
15
30
5
Max
-100
116
100
100
100
6.2
1.3
54
30
30
1
4
Units
mΩ
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V