CEB6056 CET [Chino-Excel Technology], CEB6056 Datasheet - Page 3

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CEB6056

Manufacturer Part Number
CEB6056
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
4800
4000
3200
2400
1600
800
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
25
20
15
10
5
0
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
C rss
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
1
, Junction Temperature( C)
5
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
0
with Temperature
2
25
10
V
GS
50
3
=10,9,8,7,6V
75
15
4
C oss
C iss
100
20
5
125
150
25
6
CEP6056/CEB6056
3
140
105
10
10
10
2.6
2.2
1.8
1.4
1.0
0.6
0.2
70
35
0
1
0
-1
-100
Figure 6. Body Diode Forward Voltage
0.4
0
V
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=20A
V
, Body Diode Forward Voltage (V)
T
=10V
GS
-50
J
, Junction Temperature( C)
0.6
2
, Gate-to-Source Voltage (V)
T
J
with Temperature
=125 C
0
0.8
4
50
1.0
6
-55 C
100
25 C
1.2
150
8
200
1.4
10

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