P4C116-15CM PYRAMID [Pyramid Semiconductor Corporation], P4C116-15CM Datasheet

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P4C116-15CM

Manufacturer Part Number
P4C116-15CM
Description
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
P4C116/P4C116L
ULTRA HIGH SPEED 2K x 8
STATIC CMOS RAMS
FEATURES
DESCRIPTION
The P4C116/P4C116L are 16,384-bit ultra high-speed
static RAMs organized as 2K x 8. The CMOS memories
require no clocks or refreshing and have equal access
and cycle times. Inputs are fully TTL-compatible. The
RAMs operate from a single 5V±10% tolerance power
supply. Current drain is typically 10 µA from a 2.0V
supply.
FUNCTIONAL BLOCK DIAGRAM
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35 ns (Commercial)
– 15/20/25/35 ns (Military)
Low Power Operation
Output Enable Control Function
Single 5V±10% Power Supply
Common Data I/O
1
Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption.
The P4C116 is available in 24-pin 300 mil DIP, SOJ and
SOIC packages, a solder seal flatpack and 4 different
LCC packages (24, 28, 32, and 40 pin).
PIN CONFIGURATIONS
Fully TTL Compatible Inputs and Outputs
Produced with PACE II Technology
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP, SOIC, SOJ
– 24-Pin Solder Seal Flat Pack
– 24-Pin Rectangular LCC (300 x 400 mils)
– 28-Pin Square LCC (450 x 450 mils)
– 32-Pin Rectangular LCC (450 x 550 mils)
– 40-Pin Square LCC (480 x 480 mils)
LCC configurations at end of datasheet
SOLDER SEAL FLAT PACK (FS-1) SIMILAR
DIP (P4, C4), SOJ (J4), SOIC (S4)
Document # SRAM110 REV A
Revised October 2005
TM

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P4C116-15CM Summary of contents

Page 1

... Access times as fast as 10 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption. The P4C116 is available in 24-pin 300 mil DIP, SOJ and SOIC packages, a solder seal flatpack and 4 different LCC packages (24, 28, 32, and 40 pin). PIN CONFIGURATIONS ...

Page 2

... Parameter Value Temperature Under –55 to +125 Bias Storage Temperature –65 to +150 Power Dissipation 1.0 DC Output Current 50 (4) = 25° 1.0MHz) A Parameter Conditions Typ. Unit Input Capacitance Output Capacitance OUT P4C116 P4C116L Min Max Min Max 2.2 V +0.5 2 –0.5 0.8 –0.5 0.8 (3) (3) V –0.2 V +0.5 V – ...

Page 3

... DATA RETENTION CHARACTERISTICS (P4C116L Military Temperature Only) Symbol Parameter V V for Data Retention Data Retention Current CCDR t Chip Deselect to CDR Data Retention Time t † Operation Recovery Time +25°C A §t = Read Cycle Time RC † This parameter is guaranteed but not tested. ...

Page 4

... P4C116/P4C116L TIMING WAVEFORM OF READ CYCLE NO. 1 (OE TIMING WAVEFORM OF READ CYCLE NO. 2 (ADDRESS CONTROLLED) TIMING WAVEFORM OF READ CYCLE NO. 3 (CE CONTROLLED) Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 5

... WE CONTROLLED CONTROLLED) CE 13. Write Cycle Time is measured from the last valid address to the first and t . transitioning address P4C116/P4C116L –20 –35 –25 Unit ...

Page 6

... Figure 1. Output Load * including scope and test fixture. Note: Because of the ultra-high speed of the P4C116/L, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the V planes directly up to the contactor fingers. A 0.01 µ ...

Page 7

... LCC PIN CONFIGURATIONS 24-Pin LCC (L8) 32-Pin LCC (L6) Document # SRAM110 REV A P4C116/P4C116L 28-Pin LCC (L5-1) 40-Pin LCC (L10) Page ...

Page 8

... P4C116/P4C116L ORDERING INFORMATION SELECTION GUIDE The P4C116 is available in the following temperature, speed and package options. Temperature Package Range Commercial Plastic DIP Plastic SOJ Plastic SOIC Military 24-Pin Rect. LCC Temperature 28-Pin Sq. LCC 32-Pin Rect. LCC 40-Pin Sq. LCC Side Brazed DIP CERPACK Military 24-Pin Rect ...

Page 9

... SOLDER SEAL FLATPACK FS-1 Pkg # # Pins 24 Symbol Min Max A 0.045 0.115 b 0.015 0.022 b1 0.015 0.019 c 0.004 0.009 c1 0.004 0.006 D - 0.640 E 0.350 0.420 E1 - 0.450 E2 0.180 - E3 0.030 - e 0.050 BSC k 0.008 0.015 L 0.250 0.370 Q 0.026 0.045 S1 0.000 - M - 0.0015 N 24 Document # SRAM110 REV A P4C116/P4C116L Page ...

Page 10

... P4C116/P4C116L SOJ SMALL OUTLINE IC PACKAGE J4 Pkg # # Pins 24 (300 mil) Symbol Min Max A 0.128 0.148 A1 0.082 - b 0.016 0.020 C 0.007 0.010 D 0.620 0.630 e 0.050 BSC E 0.335 BSC E1 0.292 0.300 E2 0.267 BSC Q 0.025 - SQUARE LEADLESS CHIP CARRIER Pkg # L5-1 # Pins 28 Symbol Min Max A 0.060 0.075 A1 0 ...

Page 11

... Max A 0.064 0.076 A1 0.054 0.066 B1 0.022 0.028 D 0.292 0.308 D1 0.200 BSC D2 0.100 BSC D3 - 0.308 E 0.392 0.408 E1 0.300 BSC E2 0.150 BSC E3 - 0.408 e 0.050 BSC h 0.025 REF j 0.015 REF L 0.040 0.050 L1 0.040 0.050 L2 0.077 0.093 Document # SRAM110 REV A P4C116/P4C116L Page ...

Page 12

... P4C116/P4C116L SQUARE LEADLESS CHIP CARRIER L10 Pkg # # Pins 40 Symbol Min Max A 0.060 0.080 A1 0.050 0.075 B1 0.015 0.025 D/E 0.475 0.492 D1/E1 0.360 BSC D2/E2 0.180 BSC D3/E3 - 0.492 e 0.040 BSC .0075 j 0.026 REF L 0.030 0.050 L1 0.030 0.050 L2 0.080 0.090 ND/NE 10 PLASTIC DUAL IN-LINE PACKAGE Pkg # ...

Page 13

... SOIC/SOP SMALL OUTLINE IC PACKAGE S4 Pkg # # Pins 24 (300 Mil) Symbol Min Max A 0.093 0.104 A1 0.004 0.012 b2 0.013 0.020 C 0.009 0.012 D 0.598 0.614 e 0.050 BSC E 0.291 0.299 H 0.394 0.419 h 0.010 0.029 L 0.016 0.050 0° 8° Document # SRAM110 REV A P4C116/P4C116L Page ...

Page 14

... P4C116/P4C116L REVISIONS DOCUMENT NUMBER: SRAM110 DOCUMENT TITLE: P4C116 / P4C116L ULTRA HIGH SPEED STATIC CMOS RAMS ORIG. OF ISSUE REV. DATE CHANGE OR 1997 DAB A Oct-05 JDB Document # SRAM110 REV A DESCRIPTION OF CHANGE New Data Sheet Change logo to Pyramid Page ...

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