K9K4G08U0M Samsung, K9K4G08U0M Datasheet - Page 38

• Manufacturer Part Number: K9K4G08U0M
• Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
cuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides
additional software protection.
Figure 18. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
K9K4G16Q0M
K9K4G16U0M
IL
during power-up and power-down. A recovery time of minimum 10 s is required before internal cir-
10 s
High
38
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V