HMC263LP4E_09 HITTITE [Hittite Microwave Corporation], HMC263LP4E_09 Datasheet - Page 5

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HMC263LP4E_09

Manufacturer Part Number
HMC263LP4E_09
Description
GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
8 - 6
8
Absolute Maximum Ratings
Outline Drawing
Package Information
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 7.7 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
[1] 4-Digit lot number XXXX
[2] Max peak refl ow temperature of 260 °C
HMC263LP4E
Part Number
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
RoHS-compliant Low Stress Injection Molded Plastic
Package Body Material
+5.5 Vdc
-5 dBm
175 °C
0.7 W
130 °C/W
-65 to +150 °C
-40 to +85 °C
v01.0709
Order On-line at www.hittite.com
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
MUST BE SOLDERED TO PCB RF GROUND.
100% matte Sn
Lead Finish
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
MSL Rating
MSL3
HMC263LP4E
[2]
Package Marking
XXXX
H263
[1]

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