EN29LV800 EON [Eon Silicon Solution Inc.], EN29LV800 Datasheet - Page 24

• Manufacturer Part Number: EN29LV800
• Description: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 7. DC Characteristics
(T
Notes
1. BYTE# pin can also be GND
they draw power if not at full CMOS supply voltages.
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Symbol
V
a
I
I
I
I
V
V
I
CC1
CC2
CC3
CC4
V
V
V
I
LKO
= 0°C to 70°C or - 40°C to 85°C; V
I
LO
OH
OL
ID
LI
IH
ID
IL
Supply Current (Program or Erase)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Current (Standby - CMOS)
Supply Current (Standby - TTL)
Output High Voltage CMOS
Supply voltage (Erase and
Supply Current (read) TTL
Output High Voltage TTL
Output Leakage Current
Automatic Sleep Mode
Input Leakage Current
Output Low Voltage
Input High Voltage
Input Low Voltage
Program lock-out)
Parameter
(read) CMOS Word
(read) CMOS Byte
CC
± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
= 2.7-3.6V)
Rev 0.4 Release Date: 2002/01/29
Byte program, Sector or
RESET# = Vcc ± 0.3V
Chip Erase in progress
CE# = V
BYTE# = RESET# =
V
Test Conditions
V
0V V
CE# = BYTE# =
I
24
0V V
IH
IL
I
OH
I
OH
OL
CE# = V
Vcc ± 0.3V
= Vss ± 0.3 V
= Vcc ± 0.3 V
f = 5MHz
A9 = V
(Note 1)
(Note 1)
= -100 A,
IL
= -2.0 mA
= 4.0 mA
OUT
; OE# = V
IN
ID
IH
Vcc
Vcc
,
IH
;
0.85 x
Vcc -
0.7 x
0.4V
10.5
Min
-0.5
Vcc
Vcc
2.3
Typ
EN29LV800
0.4
25
8
6
7
1
1
Tel: [phone]
Fax: [phone]
Vcc ±
Max
0.45
11.5
100
1.0
5.0
5.0
0.8
0.3
2.5
±5
±5
16
18
20
50
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V