RA45H4047M-01 Mitsubishi Electric Semiconductor, RA45H4047M-01 Datasheet - Page 3

• Manufacturer Part Number: RA45H4047M-01
• Description: MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
• Manufacturer: Mitsubishi Electric Semiconductor

TYPICAL PERFORMANCE
RA45H4047M
100
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
0
0
60
50
40
30
20
10
390 400 410 420 430 440 450 460 470 480
60
50
40
30
20
10
0
0
2
-15 -10
-15 -10
f=400MHz,
V
P
GG
in
=50mW
4
=5V,
DRAIN VOLTAGE V
INPUT POWER P
versus DRAIN VOLTAGE
INPUT POWER P
FREQUENCY f(MHz)
Gp
Gp
6
-5
-5
8
0
0
I
P
in
DD
T
out
ELECTROSTATIC SENSITIVE DEVICE
I
(T
DD
10
5
5
OBSERVE HANDLING PRECAUTIONS
case
in
in
P
(dBm)
(dBm)
DD
out
10
10
12
=+25°C, Z
V
V
P
(V)
f=400MHz,
V
V
DD
GG
in
f=450MHz,
V
V
=50mW
DD
GG
DD
GG
=12.5V
=5V
P
P
I
=12.5V,
=5V
=12.5V,
DD
15
out
=5V
15
out
14
20
20
16
G
24
20
16
12
8
4
0
24
20
16
12
8
4
0
MITSUBISHI ELECTRIC
=Z
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
6
4
2
0
L
=50 , unless otherwise specified)
3/9
-20
-30
-40
-50
-60
-70
100
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
2
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
nd
390 400 410 420 430 440 450 460 470 480
60
50
40
30
20
10
0
0
, 3
0
-15 -10
2
-15 -10
rd
3
f=430MHz,
V
P
rd
HARMONICS versus FREQUENCY
GG
in
=50mW
4
=5V,
INPUT POWER P
versus DRAIN VOLTAGE
DRAIN VOLTAGE V
INPUT POWER P
FREQUENCY f(MHz)
Gp
Gp
-5
6
-5
I
DD
0
8
0
I
DD
2
nd
5
10
5
in
in
(dBm)
(dBm)
10
V
V
P
DD
10
MITSUBISHI RF POWER MODULE
12
DD
GG
in
f=470MHz,
V
V
f=430MHz,
V
V
=50mW
(V)
P
=12.5V
DD
GG
=5V
DD
GG
RA45H4047M
P
out
P
=12.5V,
=12.5V,
out
=5V
15
=5V
out
15
14
I
DD
20
20
16
24
20
16
12
8
4
0
24
20
16
12
8
4
0
20
18
16
14
12
10
8
6
4
2
0
23 Dec 2002