RA45H4047M-01 Mitsubishi Electric Semiconductor, RA45H4047M-01 Datasheet - Page 4

• Manufacturer Part Number: RA45H4047M-01
• Description: MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
• Manufacturer: Mitsubishi Electric Semiconductor

TYPICAL PERFORMANCE
RA45H4047M
100
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
OUTPUT POWER and DRAIN CURRENT
90
80
70
60
50
40
30
20
10
OUTPUT POWER and DRAIN CURRENT
0
OUTPUT POWER and DRAIN CURRENT
0
0
2.5
2.5
2
f=400MHz,
V
P
f=450MHz,
V
P
f=450MHz,
V
P
DD
in
DD
in
GG
in
=50mW
=50mW
=12.5V,
=12.5V,
=50mW
3
3
4
=5V,
GATE VOLTAGE V
GATE VOLTAGE V
DRAIN VOLTAGE V
versus DRAIN VOLTAGE
versus GATE VOLTAGE
versus GATE VOLTAGE
6
3.5
3.5
8
4
4
ELECTROSTATIC SENSITIVE DEVICE
(T
10
OBSERVE HANDLING PRECAUTIONS
case
4.5
4.5
GG
GG
DD
12
=+25°C, Z
(V)
(V)
(V)
P
P
P
out
out
I
out
DD
5
5
14
I
DD
I
DD
5.5
5.5
16
G
MITSUBISHI ELECTRIC
=Z
20
18
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
L
=50 , unless otherwise specified)
4/9
100
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
80
70
60
50
40
30
20
10
OUTPUT POWER and DRAIN CURRENT
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
2.5
2.5
2
f=470MHz,
V
P
f=430MHz,
V
P
f=470MHz,
V
P
GG
in
DD
in
DD
in
=50mW
=50mW
=50mW
4
=5V,
=12.5V,
=12.5V,
3
3
DRAIN VOLTAGE V
versus DRAIN VOLTAGE
versus GATE VOLTAGE
versus GATE VOLTAGE
GATE VOLTAGE V
GATE VOLTAGE V
6
3.5
3.5
8
4
4
10
4.5
4.5
GG
GG
DD
12
MITSUBISHI RF POWER MODULE
(V)
(V)
(V)
P
P
RA45H4047M
out
out
P
out
14
5
5
I
DD
I
I
DD
DD
16
5.5
5.5
20
18
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
23 Dec 2002