K9F6408Q0C-B Samsung semiconductor, K9F6408Q0C-B Datasheet - Page 10

• Manufacturer Part Number: K9F6408Q0C-B
• Description: 8M x 8 Bit Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
K9F6408Q0C
K9F6408U0C
AC TEST CONDITION
(K9F6408X0C-XCB0:TA=0 to 70 C, K9F6408X0C-XIB0:TA=-40 to 85 C
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
K9F6408Q0C: Vcc=1.70V~1.95V , K9F6408U0C: Vcc=2.7V~3.6V unless otherwise noted)
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F6408Q0C:Output Load (Vcc
K9F6408U0C:Output Load (Vcc
K9F6408U0C:Output Load (Vcc
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
gram factory-marked bad blocks.
cycles.
CLE
H
H
X
X
X
X
X
L
L
L
L
L
device
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
Item
ALE
X
H
H
X
X
X
X
L
L
L
L
L
(1)
IL
Parameter
or V
(
T
Parameter
IH.
A
CE
=25 C, V
X
X
X
X
H
L
L
L
L
L
L
L
Q
Q
Q
:1.8V +/-10%)
:3.0V +/-10%)
:3.3V +/-10%)
Refer to the attached technical notes for a appropriate management of invalid blocks.
CC
WE
H
H
X
X
X
X
X
=1.8V/3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
VB
I/O
IN
Spare Array
Main Array
RE
H
H
H
H
H
H
H
X
X
X
X
Test Condition
0V/V
1 TTL GATE and CL=30pF
V
V
WP
1014
H
H
H
H
H
IN
X
X
X
X
X
L
IL
Min
Symbol
CC
=0V
=0V
t
t
PROG
Nop
BERS
K9F6408Q0C
(2)
10
0V to Vcc
Vcc
Data Input
Data Output
During Read(Busy) on K9F6408U0C_T,Q or K9F6408U0C_V,F
During Read(Busy) on the devices except K9F6408U0C_T,Q
and K9F6408U0C_V,F
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
5ns
-
Read Mode
Write Mode
Q
/2
Q
Min
-
-
-
-
1020
Typ.
Min
-
-
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Typ
200
2
-
-
Mode
FLASH MEMORY
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
1024
Max
Max
10
10
K9F6408U0C
0.4V to 2.4V
1.5V
. Do not erase or pro-
5ns
Max
500
2
3
3
Blocks
Unit
Unit
pF
pF
cycles
cycles
Unit
ms
s