K9F6408Q0C-B Samsung semiconductor, K9F6408Q0C-B Datasheet - Page 24

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K9F6408Q0C-B

Manufacturer Part Number
K9F6408Q0C-B
Description
8M x 8 Bit Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
Figure 4. Read2 Operation
Figure 5. Sequential Row Read1 Operation
(only for K9F6408U0C-T,Q and K9F6408U0C-V,F valid within a block)
K9F6408Q0C
K9F6408U0C
R/B
I/O
CLE
CE
WE
ALE
R/B
RE
I/O
0
0
~
~
7
7
1st half array
(GND Input=L, 00h Command)
(A
Don't Care)
50h
00h
01h
Data Field
4
~ A
7
:
Start Add.(3Cycle)
Start Add.(3Cycle)
2nd half array
A
A
0
0
~ A
~ A
7
3
& A
Spare Field
& A
9
9
~ A
~ A
22
22
1st
2nd
Nth
t
R
1st half array
t
R
Data Field
1st half array
Data Output
(GND Input=L, 01h Command)
1st
Data Field
2nd half array
24
2nd half array
Spare Field
t
R
Spare Field
Data Output
1st
2nd
Nth
(528 Byte)
Data Output(Sequential)
2nd
Spare Field
1st half array
(GND Input=H, 00h Command)
FLASH MEMORY
Data Field
t
R
2nd half array
Data Output
(528 Byte)
Spare Field
Nth
1st
2nd
Nth

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