K9F6408U0M-TIB0 Samsung semiconductor, K9F6408U0M-TIB0 Datasheet - Page 11

• Manufacturer Part Number: K9F6408U0M-TIB0
• Description: 8M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F6408U0M-TCB0, K9F6408U0M-TIB0
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
Block Replacement
Erase Error
Buffer
memory
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
error occurs
No
Write Block Address
Erase Completed
or R/B = 1 ?
SR. 0 = 0 ?
SR. 6 = 1 ?
Write D0H
Write 70H
Write 60H
Start
Yes
Yes
No
Block B
11
Block A
Reclaim the Error
Read Flow Chart
When the error happens in Block "A", try to write the
data into another Block "B" by reloading from an exter-
nal buffer. Then, prevent further system access to
Block "A"(by creating a "invalid block" table or other
appropriate scheme.)
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00H
Start
Yes