MC-4516CD64ES-A10B NEC [NEC], MC-4516CD64ES-A10B Datasheet

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MC-4516CD64ES-A10B

Manufacturer Part Number
MC-4516CD64ES-A10B
Description
16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Manufacturer
NEC [NEC]
Datasheet
Document No. M13612EJ5V0DS00 (5th edition)
Date Published February 2000 NS CP(K)
Printed in Japan
Description
(Small Outline DIMM) on which 8 pieces of 128 M SDRAM: PD45128163 are assembled.
mounting technology on the printed circuit board.
Features
MC-4516CD64ES-A10B
MC-4516CD64PS-A10B
The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
Decoupling capacitors are mounted on power supply line for noise reduction.
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0, BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential / Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3 V
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
Unbuffered type
Serial PD
Part number
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
0.3 V power supply
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD64ES, 4516CD64PS
/CAS latency
CL = 3
CL = 2
CL = 3
CL = 2
The mark • • • • shows major revised points.
16 M-WORD BY 64-BIT
DATA SHEET
Clock frequency (MAX.)
100 MHz
100 MHz
67 MHz
67 MHz
MOS INTEGRATED CIRCUIT
Access time from CLK (MAX.)
7 ns
8 ns
7 ns
8 ns
©
1998

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MC-4516CD64ES-A10B Summary of contents

Page 1

... Decoupling capacitors are mounted on power supply line for noise reduction. Features 16,777,216 words by 64 bits organization Clock frequency and access time from CLK Part number MC-4516CD64ES-A10B MC-4516CD64PS-A10B Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge Pulsed interface Possible to assert random column address in every cycle ...

Page 2

... Ordering Information Part number Clock frequency MHz (MAX.) MC-4516CD64ES-A10B 100 MHz MC-4516CD64PS-A10B 2 MC-4516CD64ES, 4516CD64PS Package 144-pin Small Outline DIMM 8 pieces of PD45128163G5 (Rev. E) (Socket Type) (10.16mm (400) TSOP (II)) Edge connector: Gold plated 8 pieces of PD45128163G5 (Rev. P) 26.67 mm height (10.16mm (400) TSOP (II)) Data Sheet M13612EJ5V0DS00 ...

Page 3

... DQ 57 126 DQ 58 128 DQ 59 130 Vcc 132 DQ 60 134 DQ 61 136 DQ 62 138 DQ 63 140 Vss 142 SCL 144 Vcc MC-4516CD64ES, 4516CD64PS /xxx indicates active low signal. Vss ...

Page 4

... SERIAL PD SCL A11 A0 - A11 : BA0 A13 : BA1 A12 : Remark D0 - D7: PD45128163 (2M words x 16 bits x 4 banks) 4 MC-4516CD64ES, 4516CD64PS /CS CKE LDQM DQMB4 ...

Page 5

... Recommended Operating Conditions Parameter Supply voltage High level input voltage Low level input voltage Operating ambient temperature Capacitance ( MHz) A Parameter Input capacitance Data input/output capacitance MC-4516CD64ES, 4516CD64PS Symbol Condition ...

Page 6

... CC4 addition to this measured on condition that addresses are changed only one time during t CC4 measured on condition that addresses are changed only one time during t CC5 6 MC-4516CD64ES, 4516CD64PS Test condition Burst length = /CAS latency = 2 RC RC(MIN.) /CAS latency = 3 CKE ...

Page 7

... Test Conditions Parameter AC high level input voltage / low level input voltage Input timing measurement reference level Transition time (Input rise and fall time) Output timing measurement reference level 2.4 V CLK 1.4 V 0.4 V 2.4 V Input 1.4 V 0.4 V Output MC-4516CD64ES, 4516CD64PS Value 2.4 / 0.4 1 SETUP ...

Page 8

... CKE setup time (Power down exit) Command (/CS0, /CS1, /RAS, /CAS, /WE, DQMB0 - DQMB7) setup time Command (/CS0, /CS1, /RAS, /CAS, /WE, DQMB0 - DQMB7) hold time Note 1. Output load Output Remark These specifications are applied to the monolithic device. 8 MC-4516CD64ES, 4516CD64PS Symbol -A10B MIN CK3 t 15 CK2 ...

Page 9

... Delay time ACT to READ/WRITE command ACT(one) to ACT(another) command period Data-in to PRE command period Data-in to ACT(REF) command /CAS latency = 3 period (Auto precharge) /CAS latency = 2 Mode register set cycle time Transition time Refresh time (4,096 refresh cycles) MC-4516CD64ES, 4516CD64PS Symbol -A10B MIN RC1 ...

Page 10

... SDRAM module attributes 22 SDRAM device attributes : General Cycle time Access time 25- RP(MIN RRD(MIN RCD(MIN RAS(MIN.) 31 Module bank density 10 MC-4516CD64ES, 4516CD64PS Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 80H 08H 04H ...

Page 11

... Manufacturing date 95-98 Assembly serial number 99-125 Mfg specific 126 Intel specification frequency 127 Intel specification /CAS latency support Timing Chart Refer to the SYNCHRONOUS DRAM MODULE TIMING CHART Information (M13348E). MC-4516CD64ES, 4516CD64PS Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 25H 10H ...

Page 12

... Package Drawing 144-PIN DUAL IN-LINE MODULE (SOCKET TYPE (AREA (AREA MC-4516CD64ES, 4516CD64PS A (AREA (OPTIONAL HOLES (AREA A) detail of A part Data Sheet M13612EJ5V0DS00 ITEM MILLIMETERS A 67.6 A1 67.6 0.15 B 23.2 C 29.0 D 4.6 D1 1.5 0.10 D2 4.0 E 32.8 F 3.7 H 0.8(T. ...

Page 13

... MC-4516CD64ES, 4516CD64PS Data Sheet M13612EJ5V0DS00 13 ...

Page 14

... MC-4516CD64ES, 4516CD64PS Data Sheet M13612EJ5V0DS00 ...

Page 15

... ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. MC-4516CD64ES, 4516CD64PS or GND with a resistor considered to have a possibility of Data Sheet M13612EJ5V0DS00 15 ...

Page 16

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. MC-4516CD64ES, 4516CD64PS M7 98. 8 ...

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