MC-4R256CEE6B-653 NEC [NEC], MC-4R256CEE6B-653 Datasheet

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MC-4R256CEE6B-653

Manufacturer Part Number
MC-4R256CEE6B-653
Description
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
Manufacturer
NEC [NEC]
Datasheet
Document No. M14541EJ1V1DS00 (1st edition)
Date Published November 1999 NS CP (K)
Printed in Japan
Description
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
devices ( PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use
of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using
conventional system and board design technologies.
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
256 MB Direct RDRAM storage
Each RDRAM has 32 banks, for 512 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
MC-4R256CEE6B, 4R256CEE6C modules consists of sixteen 128M Direct Rambus DRAM (Direct RDRAM™)
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Direct Rambus
256M-BYTE (128M-WORD x 16-BIT)
MC-4R256CEE6B, 4R256CEE6C
PRELIMINARY DATA SHEET
The mark
TM
shows major revised points.
DRAM RIMM
MOS INTEGRATED CIRCUIT
TM
Module
©
1999

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MC-4R256CEE6B-653 Summary of contents

Page 1

... MC-4R256CEE6B, 4R256CEE6C modules consists of sixteen 128M Direct Rambus DRAM (Direct RDRAM™) devices ( PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies ...

Page 2

... Order information Part number Organization I/O Freq. MC-4R256CEE6B - 845 128M x 16 MC-4R256CEE6B - 745 MC-4R256CEE6B - 653 MC-4R256CEE6C - 845 MC-4R256CEE6C - 745 MC-4R256CEE6C - 653 2 MC-4R256CEE6B, 4R256CEE6C RAS access time Package MHz ns 800 45 184 edge connector pads RIMM 16 pieces of 711 45 with heat spreader 600 53 Edge connector : Gold plated ...

Page 3

... B84 GND B85 RDQA1 RDQA2 B86 GND B87 RDQA3 RDQA4 B88 GND B89 RDQA5 RDQA6 B90 GND B91 RDQA7 RDQA8 B92 GND MC-4R256CEE6B, 4R256CEE6C GND A1 A2 GND A3 A4 GND A5 A6 GND A7 A8 GND A9 A10 GND A11 A12 GND A13 A14 GND ...

Page 4

... A40 NC B40 A41 V B41 DD A42 V B42 DD A43 NC B43 A44 NC B44 A45 NC B45 A46 NC B46 4 MC-4R256CEE6B, 4R256CEE6C Signal Name Pad Signal Name GND A47 LDQA7 A48 GND A49 LDQA5 A50 GND A51 LDQA3 A52 GND A53 LDQA1 A54 GND A55 LCFM A56 ...

Page 5

... I/O RSL RROW2..RROW0 I RSL MC-4R256CEE6B, 4R256CEE6C Description Ground reference for RDRAM core and interface. 72 PCB connector pads. Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. Clock from master. Interface clock used for receiving RSL signals from the Channel ...

Page 6

... DD V — — REF 6 MC-4R256CEE6B, 4R256CEE6C Description Serial clock input. Clock source used to read from and write to the RDRAM control registers. Serial Presence Detect Address 0. Serial Presence Detect Address 1. Serial Presence Detect Address 2. Serial Presence Detect Clock. Serial Presence Detect Data (Open Collector I/O). ...

Page 7

... SA0 SA1 SA2 Remarks 1. Rambus Channel signals form a loop through the RIMM module, with the exception of the SIO chain. 2. See Serial Presence Detection Specification for information on the SPD device and its contents. MC-4R256CEE6B, 4R256CEE6C U16 per ...

Page 8

... CMOS output low voltage, I OL,CMOS V CMOS output high voltage, I OH,CMOS I V current REF REF REF MAX I CMOS input leakage current, (0 SCK,CMD I CMOS input leakage current, (0 SIN,SOUT 8 MC-4R256CEE6B, 4R256CEE6C Parameter 2.5V controllers 1.8V controllers = 1 mA OL,CMOS = 0.25 mA OH,CMOS CMOS CMOS DD Preliminary Data Sheet M14541EJ1V1DS00 MIN. ...

Page 9

... Propagation delay variation of RSL signals with respect Note N = Number of RDRAM devices installed on the RIMM module delta (MAX. Z0 (MAX. Z0 and MIN. Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the module.) MC-4R256CEE6B, 4R256CEE6C Note1,2 Adjusted MIN./MAX. +/ [24+(18*N* Z0)] PD MIN. Z0) / (MIN. Z0) Preliminary Data Sheet M14541EJ1V1DS00 MIN ...

Page 10

... One RDRAM in Read , balance in Active mode I DD3 One RDRAM in Write, balance in NAP mode I DD4 One RDRAM in Write, balance in Standby mode I DD5 One RDRAM in Write, balance in Active mode I DD6 10 MC-4R256CEE6B, 4R256CEE6C Preliminary Data Sheet M14541EJ1V1DS00 MAX. Unit TBD mA TBD mA TBD mA TBD mA TBD ...

Page 11

... Interval from last COLC packet with automatic retire command to ROWR RTP packet with PRER. Notes 1. Or equivalent PREC or PREX command. 2. This is a constraint imposed by the core, and is therefore in units of ms rather than t MC-4R256CEE6B, 4R256CEE6C Description Note 1 command to the same bank. Note 1 ...

Page 12

... Package Drawings [MC-4R256CEE6B] 184 EDGE CONNECTOR PADS RIMM (SOCKET TYPE detail of A part MC-4R256CEE6B, 4R256CEE6C A (AREA B) 128 M Direct RDRAM (AREA A) EEPROM detail of B part C1 R1.00 R1. Preliminary Data Sheet M14541EJ1V1DS00 ...

Page 13

... EDGE CONNECTOR PADS RIMM (SOCKET TYPE detail of A part MC-4R256CEE6B, 4R256CEE6C A (AREA B) 128 M Direct RDRAM (AREA A) EEPROM detail of B part C1 R1.00 R1. Preliminary Data Sheet M14541EJ1V1DS00 V M1 (AREA (AREA A) ...

Page 14

... Spacing from PCB left edge to connector key notch D E Spacing from contact pad PCB edge to side edge retainer notch F PCB thickness G Heat spreader thickness from PCB surface (one side) to heat spreader top surface RIMM thickness H 14 MC-4R256CEE6B, 4R256CEE6C A C MIN. 133.22 31.62 44. 1. Preliminary Data Sheet M14541EJ1V1DS00 ...

Page 15

... ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. MC-4R256CEE6B, 4R256CEE6C or GND with a resistor considered to have a possibility of Preliminary Data Sheet M14541EJ1V1DS00 15 ...

Page 16

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. MC-4R256CEE6B, 4R256CEE6C M7 98. 8 ...

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