K9F6408U0A-TCB0 SAMSUNG [Samsung semiconductor], K9F6408U0A-TCB0 Datasheet - Page 11

• Manufacturer Part Number: K9F6408U0A-TCB0
• Description: 8M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F6408U0A-TCB0, K9F6408U0A-TIB0
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
Block Replacement
Erase Error
Buffer
memory
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
error occurs
No
Read Status Register
Write Block Address
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
Page a
No
Block B
11
Block A
Reclaim the Error
Read Flow Chart
When the error happens with page "a" of Block "A", try
to write the data into another Block "B" from an exter-
nal buffer. Then, prevent further system access to
Block "A" (by creating a "invalid block" table or other
appropriate scheme.)
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes