IRKH26/16 Ruttonsha, IRKH26/16 Datasheet - Page 14
IRKH26/16
Manufacturer Part Number
IRKH26/16
Description
diode, volt, Discretes (diodes, transistors, thyristors ...), Semiconductors and Actives, amp, scr
Manufacturer
Ruttonsha
Datasheet
1.IRKH2616.pdf
(20 pages)
500
450
400
350
300
250
200
150
100
Rate Of Fall Of On-state Current - di/dt (A/µs)
10
Fig. 33 - Recovery Charge Characteristics
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
20
0.01
100
0.1
0.1
10
0.001
0.001
1
1
30
b)Recommended load line for
Rectangular gate pulse
a)Recommended load line for
Steady State Value:
R
R
(DC Operation)
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, t p >= 6 µs
40
thJC
thJC
VGD
= 0.46 K/W
= 0.40 K/W
50
IGD
0.01
60
POWER MODULES
Fig. 35 - Thermal Impedance Z
I
70
0.01
TM
= 200 A
80
100 A
50 A
20 A
10 A
Instantaneous Gate Current (A)
0.1
Square Wave Pulse Duration (s)
Fig. 36 - Gate Characteristics
90 100
IRK.41../.56.. Series
(b)
(a)
0.1
1
IRK.41.. Series
IRK.56.. Series
thJC
Frequency Limited by PG(AV)
Characteristics
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
10
110
100
(4) (3)
90
80
70
60
50
40
30
Rate Of Fall Of Forward Current - di/dt (A/µs)
Per Junction
10
Fig. 34 - Recovery Current Characteristics
1
20
(2) (1)
100
30 40
IRK.41, .56 Series
50
1000
60
10
IRK.41.. Series
IRK.56.. Series
T = 125 °C
70
J
I
TM
80
= 200 A
100 A
50 A
20 A
10 A
90 100