IRKH26/16 Ruttonsha, IRKH26/16 Datasheet - Page 20
IRKH26/16
Manufacturer Part Number
IRKH26/16
Description
diode, volt, Discretes (diodes, transistors, thyristors ...), Semiconductors and Actives, amp, scr
Manufacturer
Ruttonsha
Datasheet
1.IRKH2616.pdf
(20 pages)
700
600
500
400
300
200
100
Rate Of Fall Of On-state Current - di/dt (A/µs)
10
Fig. 57 - Recovery Charge Characteristics
IRK.71.. Series
IRK.91.. Series
T = 125 °C
20
0.01
J
100
0.1
0.1
10
0.001
0.001
1
1
30
b)Recommended load line for
Rectangular gate pulse
a)Recommended load line for
Steady State Value:
R
R
(DC Operation)
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
thJC
thJC
40
VGD
50
= 0.33 K/W
= 0.27 K/W
IGD
0.01
60
POWER MODULES
Fig. 59 - Thermal Impedance Z
I
TM
70
0.01
= 200 A
80
100 A
20 A
10 A
50 A
Square Wave Pulse Duration (s)
Instantaneous Gate Current (A)
0.1
90 100
Fig. 60 - Gate Characteristics
IRK.71../.91.. Series
(b)
(a)
0.1
1
IRK.71.. Series
IRK.91.. Series
thJC
Frequency Limited by PG(AV)
Characteristics
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
10
140
120
100
80
60
40
20
(4)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Per Junction
10
Fig. 58 - Recovery Current Characteristics
1
IRK.71.. Series
IRK.91.. Series
T = 125 °C
(3) (2)
J
20
100
30
IRK.71, .91 Series
40
(1)
50
Last Update : Sep 2002
1000
60
10
70
I
TM
80
= 200 A
100 A
20 A
50 A
10 A
90 100