BC807W T/R NXP Semiconductors, BC807W T/R Datasheet - Page 5

• Manufacturer Part Number: BC807W T/R
• Description: Semiconductors and Actives, pnp, Transistors, transistor, Discretes (diodes, transistors, thyristors ...)
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
Table 8:
T
[1]
[2]
9397 750 14023
Product data sheet
Symbol
I
I
h
h
V
V
C
f
CBO
EBO
T
amb
FE
FE
CEsat
BE
c
Pulse test: t
V
= 25 C unless otherwise specified.
BE
decreases by approximately 2 mV/K with increasing temperature.
Characteristics
Parameter
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
BC807; BC807W; BC327
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
BC807-40; BC807-40W;
BC327-40
300 s;
0.02.
Conditions
I
I
T
I
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
Rev. 05 — 21 February 2005
E
E
C
C
C
C
C
E
C
j
= 0 A; V
= 0 A; V
= 150 C
= i
= 0 A; V
= 100 mA; V
= 500 mA; V
= 500 mA; I
= 500 mA; V
= 10 mA; V
e
= 0 A; V
CB
CB
EB
= 20 V
= 20 V;
= 5 V
CB
CE
B
CE
CE
CE
= 50 mA
= 10 V;
= 5 V;
BC807; BC807W; BC327
= 1 V
= 1 V
= 1 V
45 V, 500 mA PNP general-purpose transistors
[1]
[1]
[1]
[2]
Min
-
-
-
100
100
160
250
40
-
-
-
80
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
-
-
-
-
-
-
-
-
-
-
5
-
Max
600
250
400
600
-
-
-
100
5
100
700
1.2
Unit
nA
nA
mV
V
pF
MHz
A
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