MT46V64M16P-6T IT:A Micron, MT46V64M16P-6T IT:A Datasheet - Page 66

• Manufacturer Part Number: MT46V64M16P-6T IT:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron

Figure 37:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. J; Core DDR Rev. E 7/11 EN
t DQSS (NOM)
Command
Consecutive WRITE-to-WRITE
Address
DQS
CK#
DM
Notes:
DQ
CK
WRITE
Bank,
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
Col b
T0
t DQSS
NOP
DI
T1
b
T1n
WRITE
Bank,
Col n
T2
66
T2n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
DI
T3
n
T3n
Transitioning Data
1Gb: x4, x8, x16 DDR SDRAM
NOP
T4
T4n
©2000 Micron Technology, Inc. All rights reserved.
T5
NOP
Don’t Care
Operations